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K2956 PDF Datasheet Search Results

No Part number Description ( Function ) Manufacturers PDF
63 K2900-01
N-channel MOS-FET

> Features - High Current - Low On-Resistance - No Secondary Breakdown - Low Driving Power - Avalanche Rated 2SK2900-01 FAP-IIIB Series N-channel MOS-FET 60V 14,5mΩ ±45A 60W > Outline Drawing > Applications - Motor Control - General Purpose Power Amplifier - DC-DC converters > Maximum Ratings and Characteristics - Absolute Maximum Ratings (TC=25°C), unless otherwise sp

Fuji Electric
Fuji Electric
pdf
62 K2902-01MR
2SK2902-01MR

2SK2902-01MR N-CHANNEL SILICON POWER MOS-FET Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof FUJI POWER MOS-FET TO-220F15 Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters 2.54 3. Source Maximum ratings and characteristicAbsolute maximum ratings (Tc=25°C unless otherwise specified)

Fuji Electric
Fuji Electric
pdf
61 K2915
2SK2915

2SK2915 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV) 2SK2915 Chopper Regulator, DC−DC Converter and Motor Drive Applications z Low drain−source ON resistance z High forward transfer admittance : RDS (ON) = 0.31 Ω (typ.) : |Yfs| = 15 S (typ.) Unit: mm z Low leakage current : IDSS = 100 μA (max) (VDS = 600 V) z Enhancement m

Toshiba Semiconductor
Toshiba Semiconductor
pdf
60 K2917
2SK2917

2SK2917 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV) 2SK2917 Chopper Regulator, DC−DC Converter and Motor Drive Applications z Low drain–source ON resistance z High forward transfer admittance z Low leakage current z Enhancement mode : RDS (ON) = 0.21 Ω (typ.) : |Yfs| = 17 S (typ.) Unit: mm : IDSS = 100 μA (max) (VDS = 500 V) : Vth = 2.0 to 4.

Toshiba Semiconductor
Toshiba Semiconductor
pdf
59 K2926
2SK2926

2SK2926(L), 2SK2926(S) Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) = 0.042Ω typ. • 4V gate drive devices. • High speed switching Outline DPAK–2 D G S 44 12 3 12 3 1. Gate 2. Drain 3. Source 4. Drain ADE-208-535 1st. Edition 2SK2926(L), 2SK2926(S) Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Ga

Hitachi Semiconductor
Hitachi Semiconductor
pdf
58 K2929
2SK2929

2SK2929 Silicon N Channel MOS FET High Speed Power Switching ADE-208-552C (Z) 4th. Edition Jun 1998 Features • Low on-resistance R DS =0.026 Ω typ. • High speed switching • 4V gate drive device can be driven from 5V source Outline TO–220AB D G 1 2 S 3 1. Gate 2. Drain(Flange 3. Source 2SK2929 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage G

Hitachi Semiconductor
Hitachi Semiconductor
pdf



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