K2725 PDF Datasheet Search Results |
| No | Part number | Description ( Function ) | Manufacturers | |
| 1 | K2725 | 2SK2725 2SK2725 Silicon N Channel MOS FET High Speed Power Switching REJ03G1023-0400 (Previous: ADE-208-452B) Rev.4.00 Sep 07, 2005 Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Avalanche ratings Outline RENESAS Package code: PRSS0003AE-A (Package name: TO-220C•FM) D G 1. Gate 2. Drain 3. Source 12 3 S www.DataSheet |
 Renesas Technology |
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K27 Data sheets |
| Part No | Description ( Function) | Manufacturers | |
| K2718 | 2SK2718 2SK2718 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSIII) 2SK2718 DC−DC Converter and Motor Drive Applications z Low drain−source ON resistance z High forward transfer admittance z Low leakage current z Enhancement mode : RDS (ON) = 5.6 Ω (typ.) : |Y |
 Toshiba Semiconductor |
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| K2700 | 2SK2700 2SK2700 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π–MOSIII) 2SK2700 Chopper Regulator, DC–DC Converter and Motor Drive Applications z Low drain–source ON resistance z High forward transfer admittance z Low leakage current z Enhancement mode : RDS (ON) = |
Toshiba Semiconductor |
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| K2761 | 2SK2761 2SK2761-01MR FAP-IIS Series N-channel MOS-FET 600V 1Ω 10A 50W > Features High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Repetitive Avalanche Rated > Outline Drawing > Applications S |
 Fuji Electric |
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