No | Part number | Description ( Function ) | Manufacturers | |
30 | K270 | LOW LEVEL ZENER DIODES VERY LOW VOLTAGE/ LOW LEAKAGE LOW LEVEL ZENER DIODES VERY LOW VOLTAGE, LOW LEAKAGE K120 - K510 • Conserves battery life • Unique manufacturing process • Provides lowest reverse leakage currents • Low impedance at currents specified at 10 mA and below NOMINAL ZENER VOLTAGE Vz @ Iz = 10 mA (Vdc) 1.2 1.5 1.8 2.1 2.4 2.7 3.0 3.3 3.6 3.9 4.3 4.7 5.1 DYNAMIC IMPEDANCE MAX Zz MAX Zzk @ IZ = 10 mA @ IZ = 1 |
Knox Inc |
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29 | K2700 | MOSFET ( Transistor ) - 2SK2700 2SK2700 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π–MOSIII) 2SK2700 Chopper Regulator, DC–DC Converter and Motor Drive Applications z Low drain–source ON resistance z High forward transfer admittance z Low leakage current z Enhancement mode : RDS (ON) = 3.7 Ω (typ.) Unit: mm : |Yfs| = 2.6 S (typ.) : IDSS = 100 μA (max) (VDS = 720 V) : Vth = 2.0 to |
Toshiba Semiconductor |
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28 | K2711 | MOSFET ( Transistor ) - 2SK2711 Transistors Switching (250V, 16A) 2SK2711 FFeatures 1) Low on-resistance. 2) Fast switching speed. 3) Wide SOA (safe operating area). 4) Gate-source voltage (VGSS) guaranteed to be ±30V. 5) Easily designed drive circuits. 6) Easy to use in parallel. FStructure Silicon N-channel MOSFET FExternal dimensions (Units: mm) FAbsolute maximum ratings (Ta = 25_C) |
ROHM Semiconductor |
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27 | K2715 | MOSFET ( Transistor ) - 2SK2715 Transistors Switching (500V, 2A) 2SK2715 FFeatures 1) Low on-resistance. 2) Fast switching speed. 3) Wide SOA (safe operating area). 4) Gate-source voltage (VGSS) guaranteed to be ±30V. 5) Easily designed drive circuits. 6) Easy to use in parallel. FStructure Silicon N-channel MOSFET FExternal dimensions (Units: mm) FAbsolute maximum ratings (Ta = 25_C) FPackaging specifica |
ROHM Semiconductor |
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26 | K2717 | Silicon N Channel MOS Type Field Effect Transistor 2SK2717 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSIII) 2SK2717 DC−DC Converter and Motor Drive Applications Unit: mm l Low drain−source ON resistance : RDS (ON) = 2.3 Ω (typ.) l High forward transfer admittance : |Yfs| = 4.4 S (typ.) l Low leakage current : IDSS = 100 µA (max) (VDS = 720 V) l Enhancement−mode : Vth = 2.0~4.0 V (VDS = 1 |
Toshiba |
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25 | K2718 | MOSFET ( Transistor ) - 2SK2718 2SK2718 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSIII) 2SK2718 DC−DC Converter and Motor Drive Applications z Low drain−source ON resistance z High forward transfer admittance z Low leakage current z Enhancement mode : RDS (ON) = 5.6 Ω (typ.) : |Yfs| = 2.0 S (typ.) Unit: mm : IDSS = 100 μA (max) (VDS = 720 V) : Vth = 2.0~4.0 V (VDS = 10 V, ID |
Toshiba Semiconductor |
List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
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LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
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6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |