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No Part number Description ( Function ) Manufacturers PDF
2 K2611

2SK2611 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSIII) 2SK2611 DC−DC Converter, Relay Drive and Motor Drive Applications z Low drain−source ON resistance z High forward transfer admittance z Low leakage current z Enhancement−mode : RDS (ON) = 1.1 Ω (typ.) : |Yfs| = 7.0 S (typ.) Unit: mm : IDSS = 100 μA (max) (VDS = 720 V

Toshiba Semiconductor
Toshiba Semiconductor
1 K2611B
Silicon N-Channel MOSFET

K2611B Product Description Silicon N-Channel MOSFET Features � 11A,900V, RDS(on)(Max1.10Ω)@VGS=10V � Ultra-low Gate charge(Typical 66nC) � Fast Switching Capability � 100%Avalanche Tested � Improved dv/dt capability � RoHS product General Description This N-Channel enhancement mode power field effect transistors are produced using Winsemi's proprietary, planar s


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