K2610 PDF Datasheet Search Results |
| No | Part number | Description ( Function ) | Manufacturers | |
| 1 | K2610 | 2SK2610 2SK2610 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSIII) 2SK2610 Chopper Regulator, DC−DC Converter and Motor Drive Applications z Low drain−source ON resistance z High forward transfer admittance z Low leakage current z Enhancement mode : RDS (ON) = 2.3 Ω (typ.) : |Yfs|= 4.4 S (typ.) Unit: mm : IDSS = 100 μA (max) (VDS = 72 |
 Toshiba Semiconductor |
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K26 Data sheets |
| Part No | Description ( Function) | Manufacturers | |
| K2608 | 2SK2608 2SK2608 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSIII) 2SK2608 Switching Regulator Applications z Low drain−source ON resistance z High forward transfer admittance z Low leakage current z Enhancement mode : RDS (ON) = 3.73 Ω (ty |
Toshiba Semiconductor |
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| K2674 | 2SK2674 SHINDENGEN HVX-2 Series Power MOSFET N-Channel Enhancement type 2SK2674 ( F7W90HVX2 ) OUTLINE DIMENSIONS Case : MTO-3P (Unit : mm) 900V 7A FEATURES ●Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. ●The static Rds(on) is small. ●Th |
 Shindengen Electric |
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| K2611B | Silicon N-Channel MOSFET K2611B Product Description Silicon N-Channel MOSFET Features � 11A,900V, RDS(on)(Max1.10Ω)@VGS=10V � Ultra-low Gate charge(Typical 66nC) � Fast Switching Capability � 100%Avalanche Tested � Improved dv/dt capability � RoHS product General Description This N-Channe |
 Winsemi |
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