No | Part number | Description ( Function ) | Manufacturers | |
36 | K2312 | MOSFET ( Transistor ) - 2SK2312 2SK2312 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L −π−MOSV) 2 2SK2312 Chopper Regulator, DC−DC Converter and Motor Drive Applications z 4-V gate drive z Low drain−source ON resistance z High forward transfer admittance z Low leakage current z Enhancement mode : RDS (ON) = 13 mΩ (typ.) : |Yfs| = 40 S (typ.) Unit: mm : IDSS = 100 μA (max) (VDS = 6 |
Toshiba Semiconductor |
|
35 | K2313 | MOSFET ( Transistor ) - 2SK2313 2SK2313 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L2−π−MOSV) 2SK2313 Chopper Regulator, DC−DC Converter and Motor Drive Applications Unit: mm z 4-V gate drive z Low drain−source ON resistance : RDS (ON) = 8 mΩ (typ.) z High forward transfer admittance : |Yfs| = 60 S (typ.) z Low leakage current : IDSS = 100 μA (max) (VDS = 60 V) z Enhancemen |
Toshiba Semiconductor |
|
34 | K2313 | MOSFET ( Transistor ) - 2SK2313 2SK2313 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L2−π−MOSV) 2SK2313 Chopper Regulator, DC−DC Converter and Motor Drive Applications Unit: mm z 4-V gate drive z Low drain−source ON resistance : RDS (ON) = 8 mΩ (typ.) z High forward transfer admittance : |Yfs| = 60 S (typ.) z Low leakage current : IDSS = 100 μA (max) (VDS = 60 V) z Enhancemen |
Toshiba Semiconductor |
|
33 | K2324 | MOSFET ( Transistor ) - 2SK2324 Power F-MOS FETs 2SK758 2SK2324(Tentative) Silicon N-Channel Power F-MOS s Features q Avalanche Unit : mm 4.6±0.2 ø3.2±0.1 9.9±0.3 2.9±0.2 energy capability guaranteed switching q High-speed q Low q No ON-resistance 15.0±0.3 4.1±0.2 8.0±0.2 Solder Dip 3.0±0.2 secondary breakdown s Applications q Non-contact q Solenoid q Motor relay 13.7 -0.2 +0.5 1.2±0.15 1 |
Panasonic |
|
32 | K2325TJ600 | Medium Voltage Thyristor Date:- 18th January, 2016 Data Sheet Issue:- P1 Medium Voltage Thyristor Types K2325TJ600 & K2325TJ650 Absolute Maximum Ratings VDRM VDSM VRRM VRSM VOLTAGE RATINGS Repetitive peak off-state voltage, (note 1) Non-repetitive peak off-state voltage, (note 1) Repetitive peak reverse voltage, (note 1) Non-repetitive peak reverse voltage, (note 1) MAXIMUM LIMITS 6000-6500 6000-6 |
IXYS |
|
31 | K2325TJ650 | Medium Voltage Thyristor Date:- 18th January, 2016 Data Sheet Issue:- P1 Medium Voltage Thyristor Types K2325TJ600 & K2325TJ650 Absolute Maximum Ratings VDRM VDSM VRRM VRSM VOLTAGE RATINGS Repetitive peak off-state voltage, (note 1) Non-repetitive peak off-state voltage, (note 1) Repetitive peak reverse voltage, (note 1) Non-repetitive peak reverse voltage, (note 1) MAXIMUM LIMITS 6000-6500 6000-6 |
IXYS |
List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
|
LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
|
6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |