No | Part number | Description ( Function ) | Manufacturers | |
20 | K1904 | MOSFET ( Transistor ) - 2SK1904 Ordering number:EN4211 N-Channel Silicon MOSFET 2SK1904 Ultrahigh-Speed Switching Applications Features · Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. · Micaless package facilitating mounting. Package Dimensions unit:mm 2063A [2SK1904] 10.0 3.2 3.5 7.2 4.5 2.8 18.1 16.0 5.6 14.0 1.6 1.2 0.75 1 2 3 2.55 2.4 2.4 0.7 2.55 |
Sanyo Semiconductor Corporation |
|
19 | K1908 | MOSFET ( Transistor ) - 2SK1908 |
Sanyo Semicon Device |
|
18 | K1917 | MOSFET ( Transistor ) - 2SK1917
|
Fuji Electric |
|
17 | K1918 | Silicon N-Channel MOS FET 2SK1918(L), 2SK1918(S) Silicon N-Channel MOS FET Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device can be driven from 5 V source • Suitable for Switching regulator, DC - DC converter • Avalanche ratings Outline LDPAK 4 4 123 D 12 3 G S 1. Gate 2. Drain 3. Source 4. Drain No |
Hitachi |
|
16 | K192A | MOSFET ( Transistor ) - 2SK192A TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK192A FM Tuner Applications VHF Band Amplifier Applications 2SK192A Unit: mm · High power gain: GPS = 24dB (typ.) (f = 100 MHz) · Low noise figure: NF = 1.8dB (typ.) (f = 100 MHz) · High forward transfer admittance: |Yfs| = 7 mS (typ.) (f = 1 kHz) Maximum Ratings (Ta = 25°C) Characteristics Gate-drain vol |
Toshiba Semiconductor |
|
15 | K193 | N-Channel FET (2SK193) |
NEC |
List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
|
LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
|
6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |