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K1338 PDF Datasheet

The K1338 is MOSFET ( Transistor ) - 2sk1338. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.




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Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

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No Part number Description ( Function ) Manufacturers PDF
1 K1338
MOSFET ( Transistor ) - 2SK1338

2SK1338 Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outline TO-220AB D G 1 2 3 1. Gate 2. Drain (Flange) 3. Source S 2SK1338 Absolute Maximum Ratings (Ta = 25°C) Ite

Hitachi Semiconductor
Hitachi Semiconductor
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Recommended search results related to K1338

Part No Description ( Function) Manufacturers PDF
2SK1338   Silicon N-Channel MOS FET

2SK1338 Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outline TO-220AB D G 1 2 3 1. Gate 2.

Hitachi Semiconductor
Hitachi Semiconductor
datasheet pdf
2SA1338   PNP/NPN Epitaxial Planar Silicon Transistors

Ordering number:EN1421A PNP/NPN Epitaxial Planar Silicon Transistors 2SA1338/2SC3392 High-Speed Switching Applications Features · Adoption of FBET process. · High breakdown voltage : VCEO=(–)50V. · Large current capacitiy and high fT. · Very small-sized package permitting

Sanyo Semicon Device
Sanyo Semicon Device
datasheet pdf
2SA1338   PNP Epitaxial Planar Silicon Transistors

SMD Type Transistors IC PNP Epitaxial Planar Silicon Transistors 2SA1338 SOT-23 Unit: mm Adoption of FBET process. +0.1 2.4-0.1 High breakdown voltage : VCEO=-50V. Large current capacitiy and high fT. Ultrasmall-sized package permitting sets to be smallsized, slim. +0.1 1.3-0

Kexin
Kexin
datasheet pdf
2SA1338   Transistors

Product specification 2SA1338 SOT-23 Unit: mm Adoption of FBET process. +0.1 2.4-0.1 High breakdown voltage : VCEO=-50V. Large current capacitiy and high fT. Ultrasmall-sized package permitting sets to be smallsized, slim. +0.1 1.3-0.1 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55

TY Semiconductor
TY Semiconductor
datasheet pdf
2SD1338   Silicon NPN Transistor

INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification 2SD1338 DESCRIPTION ·High Breakdown Voltage- : VCBO= 1500V (Min) ·High Switching Speed ·Built-in Damper Diode APPLICATIONS ·Designed for horizontal output applications. ABSOLUTE MAXIMUM RATI

Inchange Semiconductor
Inchange Semiconductor
datasheet pdf

[1]    

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Part Number Function Manufacturers PDF
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The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V.

Vishay Semiconductor
Vishay
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This is a popular adjustable voltage regulator.
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On Semiconductor
ON Semiconductor
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