No | Part number | Description ( Function ) | Manufacturers | |
1 | K1338 | MOSFET ( Transistor ) - 2SK1338 2SK1338 Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outline TO-220AB D G 1 2 3 1. Gate 2. Drain (Flange) 3. Source S 2SK1338 Absolute Maximum Ratings (Ta = 25°C) Ite |
Hitachi Semiconductor |
0  1  2  3  4  5  6  7  8 9 |
Recommended search results related to K1338 |
Part No | Description ( Function) | Manufacturers | |
2SK1338 | Silicon N-Channel MOS FET 2SK1338 Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outline TO-220AB D G 1 2 3 1. Gate 2. |
Hitachi Semiconductor |
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2SA1338 | PNP/NPN Epitaxial Planar Silicon Transistors Ordering number:EN1421A PNP/NPN Epitaxial Planar Silicon Transistors 2SA1338/2SC3392 High-Speed Switching Applications Features · Adoption of FBET process. · High breakdown voltage : VCEO=(–)50V. · Large current capacitiy and high fT. · Very small-sized package permitting |
Sanyo Semicon Device |
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2SA1338 | PNP Epitaxial Planar Silicon Transistors SMD Type Transistors IC PNP Epitaxial Planar Silicon Transistors 2SA1338 SOT-23 Unit: mm Adoption of FBET process. +0.1 2.4-0.1 High breakdown voltage : VCEO=-50V. Large current capacitiy and high fT. Ultrasmall-sized package permitting sets to be smallsized, slim. +0.1 1.3-0 |
Kexin |
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2SA1338 | Transistors Product specification 2SA1338 SOT-23 Unit: mm Adoption of FBET process. +0.1 2.4-0.1 High breakdown voltage : VCEO=-50V. Large current capacitiy and high fT. Ultrasmall-sized package permitting sets to be smallsized, slim. +0.1 1.3-0.1 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 |
TY Semiconductor |
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2SD1338 | Silicon NPN Transistor INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification 2SD1338 DESCRIPTION ·High Breakdown Voltage- : VCBO= 1500V (Min) ·High Switching Speed ·Built-in Damper Diode APPLICATIONS ·Designed for horizontal output applications. ABSOLUTE MAXIMUM RATI |
Inchange Semiconductor |
List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
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LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
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6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |