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K1169 PDF Datasheet Search Results

No Part number Description ( Function ) Manufacturers PDF
1 K1169
2SK1169

2SK1169, 2SK1170 Silicon N Channel MOS FET REJ03G0916-0200 (Previous: ADE-208-1254) Rev.2.00 Sep 07, 2005 Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outline RENESAS Package code: PRSS0004ZE-A (Packa

Renesas Technology
Renesas Technology
pdf

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K11 Data sheets

Part No Description ( Function) Manufacturers PDF
K1117   2SK1117

ETC
ETC
datasheet pdf
K1118   2SK1118

Toshiba
Toshiba
datasheet pdf
K117   2SK117

2SK117 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK117 Low Noise Audio Amplifier Applications • • • • High |Yfs|: |Yfs| = 15 mS (typ.) (VDS = 10 V, VGS = 0) High breakdown voltage: VGDS = −50 V Low noise: NF = 1.0dB (typ.) (VDS = 10 V, ID = 0.5 m

Toshiba Semiconductor
Toshiba Semiconductor
datasheet pdf


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