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K10A60W PDF Datasheet Search Results

No Part number Description ( Function ) Manufacturers PDF
1 K10A60W
TK10A60W

Preliminary TK10A60W TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (DTMOS ) TK10A60W Switching Regulator Applications • Low drain-source on-resistance : RDS (ON) = 0.327 by used to Super Junction Structure : DTMOS (typ.) • Easy to control Gate switching • Enhancement-mode: Vth = 2.7 to 3.7 V (VDS = 10 V, ID = 0.5 mA) 3.2 ± 0.2 10 ± 0.3 A Unit: mm

Toshiba Semiconductor
Toshiba Semiconductor
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K10A6 Data sheets

Part No Description ( Function) Manufacturers PDF
K10A60D   TK10A60D

TK10A60D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ) TK10A60D Switching Regulator Applications Unit: mm • • • • Low drain-source ON-resistance: RDS (ON) = 0.62 Ω (typ.) High forward transfer admittance: |Yfs| = 6.0 S (

Toshiba
Toshiba
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