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K10A600 PDF Datasheet Search Results

No Part number Description ( Function ) Manufacturers PDF
2 K10A60D
TK10A60D

TK10A60D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ) TK10A60D Switching Regulator Applications Unit: mm • • • • Low drain-source ON-resistance: RDS (ON) = 0.62 Ω (typ.) High forward transfer admittance: |Yfs| = 6.0 S (typ.) Low leakage current: IDSS = 10 μA (VDS = 600 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 1

Toshiba
Toshiba
pdf
1 K10A60W
TK10A60W

Preliminary TK10A60W TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (DTMOS ) TK10A60W Switching Regulator Applications • Low drain-source on-resistance : RDS (ON) = 0.327 by used to Super Junction Structure : DTMOS (typ.) • Easy to control Gate switching • Enhancement-mode: Vth = 2.7 to 3.7 V (VDS = 10 V, ID = 0.5 mA) 3.2 ± 0.2 10 ± 0.3 A Unit: mm

Toshiba Semiconductor
Toshiba Semiconductor
pdf



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