No | Part number | Description ( Function ) | Manufacturers | |
1 | K1021 | N-Channel Silicon Power MOS FET |
ETC |
0  1  2  3  4  5  6  7  8 9 |
Recommended search results related to K1021 |
Part No | Description ( Function) | Manufacturers | |
2SK1021 | N-Channel MOSFET Transistor INCHANGE Semiconductor isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Current –ID=3A@ TC=25℃ ·Drain Source Voltage- : VDSS=800V(Min) ·Fast Switching Speed APPLICATIONS ·high voltage, high speed power switching isc Product Specification 2SK1021 ABSOLUTE MAXIMUM RATIN |
Inchange Semiconductor |
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2SK1021 | (2SKxxxx) Power MOSFET w w w a d . s a t e h 4 t e . u m o c ww.datasheet39.comom |
Fuji Semiconductors |
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2SK1021 | N-Channel Silicon Power MOS FET |
ETC |
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RJK1021DPE | N-Channel Power MOSFET / Transistor RJK1021DPE N-Channel Power MOSFET High-Speed Switching Use REJ03G1630-0100 Rev.1.00 Apr 03, 2008 Features • VDSS : 100 V • RDS(on) : 20 mΩ (Max) • ID : 70 A Outline RENESAS Package code: PRSS0004AE-B (Package name: LDPAK(S)-(1) ) 4 1. Gate 2. Drain 3. Source 4. Drain 2 |
Renesas |
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RJK1021DPN | N-Channel Power MOSFET / Transistor RJK1021DPN N-Channel Power MOSFET High-Speed Switching Use REJ03G1628-0100 Rev.1.00 Apr 02, 2008 Features • VDSS : 100 V • RDS(on) : 20 mΩ (Max) • ID : 70 A Outline RENESAS Package code: PRSS0004AC-A (Package name: TO-220AB) 4 2, 4 D 1G 1. Gate 2. Drain 3. Source 4. D |
Renesas |
List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
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LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
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6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |