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J412 PDF Datasheet Search Results

No Part number Description ( Function ) Manufacturers PDF
1 J412
2SJ412

2SJ412 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L2-π-MOSV) 2SJ412 DC-DC Converter, Relay Drive and Motor Drive Applications • 4-V gate drive • Low drain-source ON resistance: RDS (ON) = 0.15 Ω (typ.) • High forward transfer admittance: |Yfs| = 7.7 S (typ.) • Low leakage current: IDSS = −100 μA (max) (VDS = −100 V) • Enhancement mode: Vth =

Toshiba Semiconductor
Toshiba Semiconductor
pdf

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J4 Data sheets

Part No Description ( Function) Manufacturers PDF
J449    2SJ449

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ449 SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SJ449 is P-Channel MOS Field Effect Transistor designed for high voltage switching applications. PACKAGE DIMENSIONS (in millimeters) 10.0 ±0.3 3.2 ±0.2 4.5 ±0.2 2

NEC
NEC
datasheet pdf
J476    2SJ476

Fuji Electric
Fuji Electric
datasheet pdf
J412   2SJ412

2SJ412 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L2-π-MOSV) 2SJ412 DC-DC Converter, Relay Drive and Motor Drive Applications • 4-V gate drive • Low drain-source ON resistance: RDS (ON) = 0.15 Ω (typ.) • High forward transfer admittance: |Yfs| = 7.7 S (

Toshiba Semiconductor
Toshiba Semiconductor
datasheet pdf


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