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Datasheet J21 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 19 | J210 | N-channel field-effect transistors DISCRETE SEMICONDUCTORS
DATA SHEET
J210; J211; J212 N-channel field-effect transistors
Product specification File under Discrete Semiconductors, SC07 1997 Dec 01
Philips Semiconductors
Product specification
N-channel field-effect transistors
FEATURES • High speed switching • Interchangea |
 NXP Semiconductors |
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| 18 | J210 | N-Channel RF Amplifier J210 / J211 / J212 / MMBFJ210 / MMBFJ211 / MMBFJ212
J210 J211 J212
MMBFJ210 MMBFJ211 MMBFJ212
G
S G S
TO-92
D
SOT-23
Mark: 62V / 62W / 62X
D
NOTE: Source & Drain are interchangeable
N-Channel RF Amplifier
This device is designed for HF/VHF mixer/amplifier and applications where Process 50 is |
 Fairchild Semiconductor |
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| 17 | J210 | N-Channel JFET N-Channel JFET
CORPORATION
J210 – J212 / SSTJ210 – SSTJ212
FEATURES DESCRIPTION The J210 Series is an N-Channel JFET single device encapsulated in a TO-92 plastic package well suited for automated assembly. The device features low leakage, typically under 2 pA, low noise, under 10 nano volts pe |
 Calogic LLC |
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| 16 | J210 | LOW NOISE N-CHANNEL J-FET GENERAL PURPOSE AMPLIFIER J210, J211, J212
Linear Integrated Systems
LOW NOISE N-CHANNEL J-FET GENERAL PURPOSE AMPLIFIER
TO-92
FEATURES
HIGH GAIN gfs = 7000µmho MINIMUM (J211, J212) HIGH INPUT IMPEDANCE IGSS= 100pA MAXIMUM LOW INPUT CAPACITANCE Ciss= 5pF TYPICAL ABSOLUTE MAXIMUM RATINGS @ 25°C (unless otherwise noted) Ga |
 Linear Integrated Systems |
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