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Datasheet IXFH26N60 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 3 | IXFH26N60 | Power MOSFETs HiPerFETTM Power MOSFETs
IXFH 26N60/IXFT 26N60 IXFK 28N60
N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low t
rr
Preliminary data
V DSS
I
D25
600 V 26 A
600 V 28 A
trr £ 250 ns
R DS(on)
0.25 W 0.25 W
Symbol
VDSS VDGR V
GS
VGSM I
D25
I
DM
I
AR
EAR EAS
dv/dt
P D
TJ TJM Tstg TL
Md |
 IXYS |
 |
| 2 | IXFH26N60P | N-Channel Enhancement Mode Fast Recovery Diode Avalanche Rated Advance AdvanceTechnical TechnicalInformation Information
PolarHVTM Power MOSFET
N-Channel Enhancement Mode Fast Recovery Diode Avalanche Rated
IXFH 26N60P IXFQ 26N60P IXFT 26N60P IXFV 26N60P IXFV 26N60PS
VDSS ID25
= = RDS(on) ≤ ≤ trr
TO-247 (IXFH)
600 V 26 A 270 mΩ 20 |
 IXYS Corporation |
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| 1 | IXFH26N60Q | Power MOSFETs HiPerFETTM Power MOSFETs
Q-Class
N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Qg
IXFH 26N60Q IXFT 26N60Q
VDSS ID25 RDS(on)
= 600 V = 26 A = 0.25 Ω
trr ≤ 250 ns
Symbol VDSS VDGR V
GS
VGSM I
D25
IDM IAR EAR EAS dv/dt
P D
TJ T
JM
Tstg T
L
Md Weight
Symbol
VDSS VGS(th) IGSS IDSS
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IXYS |
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| Número de pieza | Descripción | Fabricantes | |
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