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IXFH26N60 PDF Datasheet Search Results

No Part number Description ( Function ) Manufacturers PDF
3 IXFH26N60
Power MOSFETs

HiPerFETTM Power MOSFETs IXFH 26N60/IXFT 26N60 IXFK 28N60 N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low t rr Preliminary data V DSS I D25 600 V 26 A 600 V 28 A trr £ 250 ns R DS(on) 0.25 W 0.25 W Symbol VDSS VDGR V GS VGSM I D25 I DM I AR EAR EAS dv/dt P D TJ TJM Tstg TL Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW C

IXYS
IXYS
pdf
2 IXFH26N60P
N-Channel Enhancement Mode Fast Recovery Diode Avalanche Rated

Advance AdvanceTechnical TechnicalInformation Information PolarHVTM Power MOSFET N-Channel Enhancement Mode Fast Recovery Diode Avalanche Rated IXFH 26N60P IXFQ 26N60P IXFT 26N60P IXFV 26N60P IXFV 26N60PS VDSS ID25 = = RDS(on) ≤ ≤ trr TO-247 (IXFH) 600 V 26 A 270 mΩ 200 ns Symbol VDSS VDGR VGSS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md

IXYS Corporation
IXYS Corporation
pdf
1 IXFH26N60Q
Power MOSFETs

HiPerFETTM Power MOSFETs Q-Class N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Qg IXFH 26N60Q IXFT 26N60Q VDSS ID25 RDS(on) = 600 V = 26 A = 0.25 Ω trr ≤ 250 ns Symbol VDSS VDGR V GS VGSM I D25 IDM IAR EAR EAS dv/dt P D TJ T JM Tstg T L Md Weight Symbol VDSS VGS(th) IGSS IDSS R DS(on) Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 M

IXYS
IXYS
pdf



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