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Datasheet IXB Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 38 | IXBD4410 | (IXBD4410 / IXBD4411) ISOSMART Half Bridge Driver Chipset IXBD4410 IXBD4411
ISOSMARTTM Half Bridge Driver Chipset
Type Description Package Temperature Range
IXBD4410PI IXBD4411PI IXBD4410SI IXBD4411SI
Full-Feature Low-Side Driver 16-Pin P-DIP Full-Feature High-Side Driver 16-Pin P-DIP Full-Feature Low-Side Driver 16-Pin SO Full-Feature High-Side Driver |
 IXYS Corporation |
 |
| 37 | IXBD4411 | (IXBD4410 / IXBD4411) ISOSMART Half Bridge Driver Chipset IXBD4410 IXBD4411
ISOSMARTTM Half Bridge Driver Chipset
Type Description Package Temperature Range
IXBD4410PI IXBD4411PI IXBD4410SI IXBD4411SI
Full-Feature Low-Side Driver 16-Pin P-DIP Full-Feature High-Side Driver 16-Pin P-DIP Full-Feature Low-Side Driver 16-Pin SO Full-Feature High-Side Driver |
IXYS Corporation |
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| 36 | IXBF12N300 | Monolithic Bipolar MOS Transistor High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor
(Electrically Isolated Tab)
IXBF12N300
VCES = IC110 = VCE(sat) ≤
3000V 11A 3.2V
Symbol Test Conditions
VCES VCGR
VGES VGEM
IC25 IC110 ICM
SSOA (RBSOA)
TC = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ Continuous Transie |
 IXYS |
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| 35 | IXBF40N160 | High Voltage BIMOSFET High Voltage BIMOSFETTM
in High Voltage ISOPLUS i4-PACTM
Monolithic Bipolar MOS Transistor
IXBF 40N160
IC25 = 28 A VCES = 1600 V VCE(sat) = 6.2 V tf = 40 ns
1 5
IGBT
Symbol VCES VGES IC25 IC90 ICM VCEK Ptot
Symbol
V CE(sat)
VGE(th) ICES
IGES td(on) t
r
td(off) tf C
ies
QGon VF RthJC
Conditions TV |
IXYS |
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