No | Part number | Description ( Function ) | Manufacturers | |
1 | IRLZ44NPBF | Power MOSFET ( Transistor ) l Logic-Level Gate Drive l Advanced Process Technology l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching spe |
International Rectifier |
0  1  2  3  4  5  6  7  8 9 |
Recommended search results related to IRLZ44NPBF |
Part No | Description ( Function) | Manufacturers | |
AUIRLZ44Z | Power MOSFET ( Transistor ) PD - 97682 AUTOMOTIVE GRADE Features ● ● ● ● ● ● ● Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified * HEXFET® Power MOSFET D |
International Rectifier |
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IRLZ44 | (IRLZ40 / IRLZ44) N-CHANNEL LOGIC LEVEL MOSFET |
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IRLZ44 | Power MOSFET ( Transistor )
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International Rectifier |
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IRLZ44 | Power MOSFET ( Transistor ) Power MOSFET IRLZ44, SiHLZ44 Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 60 VGS = 5.0 V 66 12 43 Single 0.028 TO-220AB D S D G G S N-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free SnPb FEATURES • Dy |
Vishay |
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IRLZ44A | ADVANCED POWER MOSFET |
Samsung semiconductor |
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