No | Part number | Description ( Function ) | Manufacturers | |
6 | IRLZ44N | 55V, 47A, HEXFET Power MOSFET |
International Rectifier |
|
5 | IRLZ44NL | Power MOSFET ( Transistor ) PD - 91347D IRLZ44NS/L Logic-Level Gate Drive l Advanced Process Technology l Surface Mount (IRLZ44NS) l Low-profile through-hole (IRLZ44NL) l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated Description l HEXFET® Power MOSFET D VDSS = 55V RDS(on) = 0.022Ω G ID = 47A S Fifth Generation HEXFETs from International Rectifier utili |
International Rectifier |
|
4 | IRLZ44NLPBF | Power MOSFET ( Transistor ) PD - 95156 IRLZ44NS/LPbF Logic-Level Gate Drive l Advanced Process Technology l Surface Mount (IRLZ44NS) l Low-profile through-hole (IRLZ44NL) l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description l HEXFET® Power MOSFET D VDSS = 55V RDS(on) = 0.022Ω G ID = 47A S Fifth Generation HEXFETs from International R |
International Rectifier |
|
3 | IRLZ44NPBF | Power MOSFET ( Transistor ) l Logic-Level Gate Drive l Advanced Process Technology l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching spe |
International Rectifier |
|
2 | IRLZ44NS | Power MOSFET ( Transistor ) PD - 91347D IRLZ44NS/L Logic-Level Gate Drive l Advanced Process Technology l Surface Mount (IRLZ44NS) l Low-profile through-hole (IRLZ44NL) l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated Description l HEXFET® Power MOSFET D VDSS = 55V RDS(on) = 0.022Ω G ID = 47A S Fifth Generation HEXFETs from International Rectifier utili |
International Rectifier |
|
1 | IRLZ44NSPBF | Power MOSFET ( Transistor ) PD - 95156 IRLZ44NS/LPbF Logic-Level Gate Drive l Advanced Process Technology l Surface Mount (IRLZ44NS) l Low-profile through-hole (IRLZ44NL) l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description l HEXFET® Power MOSFET D VDSS = 55V RDS(on) = 0.022Ω G ID = 47A S Fifth Generation HEXFETs from International R |
International Rectifier |
List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
|
LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
|
6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |