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Datasheet IRGP6630 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 2 | IRGP6630D-EPbF | Insulated Gate Bipolar Transistor
VCES = 600V IC = 30A, TC =100°C
IRGP6630DPbF IRGP6630D-EPbF
Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode
C C
C
tSC 5µs, TJ(max) = 175°C
VCE(ON) typ. = 1.65V @ IC = 18A
Applications Welding H Bridge Converters
G
E
n-channel
G Gate
E C G IR |
 International Rectifier |
 |
| 1 | IRGP6630DPbF | Insulated Gate Bipolar Transistor
VCES = 600V IC = 30A, TC =100°C
IRGP6630DPbF IRGP6630D-EPbF
Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode
C C
C
tSC 5µs, TJ(max) = 175°C
VCE(ON) typ. = 1.65V @ IC = 18A
Applications Welding H Bridge Converters
G
E
n-channel
G Gate
E C G IR |
International Rectifier |
|
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