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IRGP6630 PDF Datasheet Search Results

No Part number Description ( Function ) Manufacturers PDF
2 IRGP6630D-EPbF
Insulated Gate Bipolar Transistor

  VCES = 600V IC = 30A, TC =100°C IRGP6630DPbF IRGP6630D-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode   C  C C tSC 5µs, TJ(max) = 175°C VCE(ON) typ. = 1.65V @ IC = 18A Applications  Welding  H Bridge Converters G E n-channel G Gate E C G IRGP6630DPbF  TO‐247AC  C Collector GCE IRGP6630D‐EPbF  TO‐247AD  E Emi

International Rectifier
International Rectifier
pdf
1 IRGP6630DPbF
Insulated Gate Bipolar Transistor

  VCES = 600V IC = 30A, TC =100°C IRGP6630DPbF IRGP6630D-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode   C  C C tSC 5µs, TJ(max) = 175°C VCE(ON) typ. = 1.65V @ IC = 18A Applications  Welding  H Bridge Converters G E n-channel G Gate E C G IRGP6630DPbF  TO‐247AC  C Collector GCE IRGP6630D‐EPbF  TO‐247AD  E Emi

International Rectifier
International Rectifier
pdf


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