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IRGP4063D-EPBF PDF Datasheet

The IRGP4063D-EPBF is Insulated Gate Bipolar Transistor. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.




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Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

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No Part number Description ( Function ) Manufacturers PDF
1 IRGP4063D-EPBF
INSULATED GATE BIPOLAR TRANSISTOR

IRGP4063DPbF IRGP4063D-EPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • • • • • • • Low VCE (ON) Trench IGBT Technology Low switching losses Maximum Junction temperature 175 °C 5 μS short circuit SOA Square RBSOA 100% of the parts tested for 4X rated current (ILM) Positive VCE (ON) Temperature co-efficient Ultra fa

International Rectifier
International Rectifier
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Recommended search results related to IRGP4063D-EPBF

Part No Description ( Function) Manufacturers PDF
AUIRGP4063D   INSULATED GATE BIPOLAR TRANSISTOR

AUTOMOTIVE GRADE AUIRGP4063D AUIRGP4063D-E INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE (ON) Trench IGBT Technology • Low switching losses • Maximum Junction temperature 175 °C • 5 μS short circuit SOA G • Square R

International Rectifier
International Rectifier
datasheet pdf
AUIRGP4063D-E   INSULATED GATE BIPOLAR TRANSISTOR

AUTOMOTIVE GRADE AUIRGP4063D AUIRGP4063D-E INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE (ON) Trench IGBT Technology • Low switching losses • Maximum Junction temperature 175 °C • 5 μS short circuit SOA G • Square R

International Rectifier
International Rectifier
datasheet pdf
IRGP4063-EPBF   INSULATED GATE BIPOLAR TRANSISTOR

PD - 97404 INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • • • • • Low VCE (ON) Trench IGBT Technology Low switching losses Maximum Junction temperature 175 °C 5 μS short circuit SOA Square RBSOA 100% of the parts tested for ILM  Positive VCE (ON) Temp

International Rectifier
International Rectifier
datasheet pdf
IRGP4063D1-EPBF   INSULATED GATE BIPOLAR TRANSISTOR

  IRGP4063D1PbF IRGP4063D1-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 600V   IC = 60A, TC =100°C tSC 5µs, TJ(max) = 175°C VCE(ON) typ. = 1.65V @ IC = 48A Applica ons  • Industrial Motor Drive  • Inverters  • UPS  

International Rectifier
International Rectifier
datasheet pdf
IRGP4063D1PBF   INSULATED GATE BIPOLAR TRANSISTOR

  IRGP4063D1PbF IRGP4063D1-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 600V   IC = 60A, TC =100°C tSC 5µs, TJ(max) = 175°C VCE(ON) typ. = 1.65V @ IC = 48A Applica ons  • Industrial Motor Drive  • Inverters  • UPS  

International Rectifier
International Rectifier
datasheet pdf

[1]    

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The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V.

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This is a popular adjustable voltage regulator.
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 6N137  |   LM393   |   2N3906    |   2N2222   |   TIP120   |

   1N5818   |   LM324N    |   A1015   |   SMAJ20CA  


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