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IRGIB15B60KD1P PDF Datasheet

The IRGIB15B60KD1P is Insulated Gate Bipolar Transistor. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.




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Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

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No Part number Description ( Function ) Manufacturers PDF
1 IRGIB15B60KD1P
INSULATED GATE BIPOLAR TRANSISTOR

PD- 94914 IRGIB15B60KD1P INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE (on) Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics. • Positive VCE (on) Temperature Coefficient. • Maximum Junction Temperature Rated at 175

International Rectifier
International Rectifier
pdf

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Recommended search results related to IRGIB15B60KD1P

Part No Description ( Function) Manufacturers PDF
IRGIB15B60KD1   INSULATED GATE BIPOLAR TRANSISTOR

PD- 94599A IRGIB15B60KD1 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Low VCE (on) Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics

International Rectifier
International Rectifier
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S1D15601   LCD Driver

MF424-21 IEEE1394 LCD driver Controller with RAM S1D15300 Series Technical Manual NOTICE No parts of this material may be reproduced or duplicated in any form or by any means without the written permission of Seiko Epson. Seiko Epson r

Epson
Epson
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