| No | Part number | Description ( Function ) | Manufacturers | |
| 11 | IRFZ44N | 49A, 55V, N-channel Enhancement Mode TrenchMOS Transistor Philips Semiconductors Product specification N-channel enhancement mode TrenchMOSTM transistor GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a plastic envelope using ’trench’ technology. The device features very low on-state resistance and has integral zener diodes giving ESD protection up to 2kV. It is |
 NXP Semiconductors |
|
| 10 | IRFZ44N | 55V, 49A, HEXFET Power MOSFET PD - 94053 IRFZ44N HEXFET® Power MOSFET l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 55V RDS(on) = 17.5mΩ G S ID = 49A Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low |
 International Rectifier |
|
| 9 | IRFZ44N | Trans MOSFET N-CH 55V 49A 3-Pin(3+Tab) TO-220AB |
 New Jersey Semiconductor |
|
| 8 | IRFZ44N | N-CHANNEL Power MOSFET APPLICATION Buck Converter High Side Switch DC motor control , Ups ...etc , & other Application VDSS 55V RDS(ON) Max. 17.5mȍ PIN CONFIGURATION TO-220 Front View ID 50A IRFZ44N N-CHANNEL Power MOSFET FEATURES Ultra Low ON Resistance Low Gate Charge Dynamic dv/dt Rating Inductive Switching Curves Peak Current vs Pulse Width Curve SYMBOL D GATE DRAIN |
 Matsu |
|
| 7 | IRFZ44N | N-Channel MOSFET Transistor INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification IRFZ44N FEATURES ·Drain Current –ID=49A@ TC=25℃ ·Drain Source Voltage- : VDSS= 55V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.032Ω(Max) ·Fast Switching DESCRIPTION ·Designed for low voltage, high speed switching applications in power supplies, converters and power motor cont |
 INCHANGE |
|
| 6 | IRFZ44NL | (IRFZ44NL / IRFZ44NS) Power MOSFET PD - 94153 Advanced Process Technology Surface Mount (IRFZ44NS) l Low-profile through-hole (IRFZ44NL) l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated Description l l IRFZ44NS IRFZ44NL HEXFET® Power MOSFET D VDSS = 55V RDS(on) = 0.0175Ω Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve ex |
International Rectifier |
|
List of most widely used semiconductors
| Part Number | Function | Manufacturers | |
| 1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
 Vishay |
|
| LM317 | This is a popular adjustable voltage regulator. |
 ON Semiconductor |
|
6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |
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