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IRFZ24NS PDF Datasheet Search Results

No Part number Description ( Function ) Manufacturers PDF
3 IRFZ24NS
Power MOSFET

PD - 9.1355B IRFZ24NS/L HEXFET® Power MOSFET l l l l l l Advanced Process Technology Surface Mount (IRFZ24NS) Low-profile through-hole (IRFZ24NL) 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 55V RDS(on) = 0.07Ω G ID = 17A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing t

International Rectifier
International Rectifier
pdf
2 IRFZ24NS
Power MOSFET

IRFZ24NS/NL Power MOSFET VDSS = 55V, RDS(on) = 0.07 mohm, ID = 17 A D N Channel G S Symbol ELECTRICAL CHARACTERISICS at Tj = 25 C Maximum. Unless stated Otherwise Parameter Symbol Test Conditions Value Min Typ Drain to Source Breakdown Voltage Drain to Source Leakage Current V(BR)DSS VGS = 0 VDC, ID = 250µA IDSS VDS = 55VDC, VGS = 0VDC VDS = 44VDC, VGS = 0VDC Tj=15

TRANSYS
TRANSYS
pdf
1 IRFZ24NSPBF
HEXFET Power MOSFET

PD - 95147 IRFZ24NS/LPbF l l l l l l l Advanced Process Technology Surface Mount (IRFZ24NS) Low-profile through-hole (IRFZ24NL) 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free HEXFET® Power MOSFET D VDSS = 55V RDS(on) = 0.07Ω G ID = 17A S Description Absolute Maximum Ratings ID @ TC = 25°C ID @ TC = 100°C IDM PD @TA

International Rectifier
International Rectifier
pdf



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