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IRFZ24 PDF Datasheet Search Results

No Part number Description ( Function ) Manufacturers PDF
23 IRFZ24
Power MOSFET

International Rectifier
International Rectifier
pdf
22 IRFZ24
Power MOSFET

Advanced Power MOSFET IRFZ24 FEATURES ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ 175°C Operating Temperature ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 60V ♦ Lower RDS(ON): 0.050µ (Typ.) Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD

Fairchild Semiconductor
Fairchild Semiconductor
pdf
21 IRFZ24
Power MOSFET

Power MOSFET IRFZ24, SiHFZ24 Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 60 VGS = 10 V 25 5.8 11 Single D 0.10 TO-220AB G S D G S N-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free SnPb FEATURES • Dynamic dV/dt Rating • 175 °C Operating Temperature • Fast Switching • Ease of Paralleling

Vishay
Vishay
pdf
20 IRFZ24A
ADVANCED POWER MOSFET

$GYDQFHG 3RZHU 026)(7 FEATURES ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ 175° C Operating Temperature ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 60V ♦ Lower RDS(ON): 0.050µ (Typ.) IRFZ24A BVDSS = 60 V RDS(on) = 0.07Ω ID = 17 A TO-220

Fairchild Semiconductor
Fairchild Semiconductor
pdf
19 IRFZ24L
Power MOSFET

IRFZ24S, IRFZ24L, SiHFZ24S, SiHFZ24S Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (nC) 60 VGS = 10 V 25 Qgs (nC) 5.8 Qgd (nC) 11 Configuration Single 0.10 I2PAK (TO-262) D2PAK (TO-263) D G SD D G S G S N-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free and Halogen-free Lead (Pb)-free Note a. See device orientation.

Vishay
Vishay
pdf
18 IRFZ24L
HEXFET Power MOSFET

PD - 9.891A IRFZ24S/L HEXFET® Power MOSFET l l l l l Advanced Process Technology Surface Mount (IRFZ24S) Low-profile through-hole (IRFZ24L) 175°C Operating Temperature Fast Switching D VDSS = 60V RDS(on) = 0.10Ω G ID = 17A Description Third Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely

International Rectifier
International Rectifier
pdf



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