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Datasheet IRFSL11N50A Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
3 | IRFSL11N50A | HEXFET Power MOSFET PD- 91847A
IRFSL11N50A
HEXFET® Power MOSFET
l l l l l
Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paraleling Simple Drive Requirements
D
VDSS = 500V
G S
RDS(on) = 0.55Ω ID = 11A
Description
Third Generation HEXFETs from International Rectifier provide the designer |
IRF |
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2 | IRFSL11N50A | Power MOSFET ( Transistor ) IRFSL11N50A, SiHFSL11N50A
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) () Qg (Max.) (nC)
500 VGS = 10 V
51
Qgs (nC)
12
Qgd (nC)
23
Configuration
Single
I2PAK (TO-262)
D
0.55
G
S D G
S
N-Channel MOSFET
ORDERING INFORMATION
Package
Lead (Pb)-free
FEATURES • Dyn |
Vishay |
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1 | IRFSL11N50APBF | HEXFET Power MOSFET PD- 95231
IRFSL11N50APbF
•
Lead-Free
www.irf.com
1
04/29/04
IRFSL11N50APbF
2
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IRFSL11N50APbF
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3
IRFSL11N50APbF
4
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IRFSL11N50APbF
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5
IRFSL11N50APbF
6
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IRFSL11N50APbF
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7
IRFSL11N50APbF
TO-2 |
International Rectifier |
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Número de pieza | Descripción | Fabricantes | |
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