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IRFP460 PDF Datasheet Search Results

No Part number Description ( Function ) Manufacturers PDF
22 IRFP460
PowerMOS transistors Avalanche energy rated

Philips Semiconductors Product specification PowerMOS transistors Avalanche energy rated FEATURES • Repetitive Avalanche Rated • Fast switching • Stable off-state characteristics • High thermal cycling performance • Low thermal resistance IRFP460 SYMBOL d QUICK REFERENCE DATA VDSS = 500 V g ID = 20 A RDS(ON) ≤ 0.27 Ω s GENERAL DESCRIPTION N-channel, enhance

NXP
NXP
pdf
21 IRFP460
Power MOSFET

$GYDQFHG 3RZHU 026)(7 IRFP460 FEATURES ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 500V ♦ Lower RDS(ON): 0.197Ω (Typ.) Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic

Fairchild Semiconductor
Fairchild Semiconductor
pdf
20 IRFP460
Power MOSFET

International Rectifier
International Rectifier
pdf
19 IRFP460
Power MOSFET

IRFP460, SiHFP460 Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration VGS = 10 V 210 29 110 Single D FEATURES 500 0.27 • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Isolated Central Mounting Hole • Fast Switching • Ease of Paralleling • Simple Drive Requirements • Lead (Pb)-free Available Ava

Vishay Siliconix
Vishay Siliconix
pdf
18 IRFP460
N-Channel Power MOSFET

IRFP460 Data Sheet July 1999 File Number 2291.3 20A, 500V, 0.270 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such

Intersil Corporation
Intersil Corporation
pdf
17 IRFP460
N-Channel Power MOSFET

® IRFP460 N - CHANNEL 500V - 0.22 Ω - 20 A - TO-247 PowerMESH™ MOSFET TYPE IRFP460 s s s s s V DSS 500 V R DS(on) < 0.27 Ω ID 20 A TYPICAL RDS(on) = 0.22 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED 3 2 1 DESCRIPTION This power MOSFET is designed using the company’s consolidated strip layout-base

ST Microelectronics
ST Microelectronics
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