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IRFP360 PDF Datasheet

The IRFP360 is Power MOSFET ( Transistor ), N-channel MOSFET Transistor. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.




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Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

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No Part number Description ( Function ) Manufacturers PDF
9 IRFP360
Power MOSFET ( Transistor )

Power MOSFET IRFP360, SiHFP360 Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 400 VGS = 10 V 210 30 110 Single 0.20 TO-247 D S D G G S N-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free SnPb FEATURES • Dynamic dV/dt Rated • Repetitive Avalanche Rated • Isolated Central Mounting Hole • Fast Switch

Vishay
Vishay
pdf
8 IRFP360
N-Channel Enhancement Mode FET

MegaMOSTMFET N-Channel Enhancement Mode IRFP 360 VDSS = 400 V ID25 = 23 A RDS(on) = 0.20 Ω Preliminary data Symbol VDSS V DGR VGS VGSM ID25 ID100 IDM IAR EAR dv/dt PD TJ TJM Tstg Md Weight Test Conditions TJ = 25°C to 150°C T J = 25°C to 150°C; R GS = 1.0 MΩ Continuous Transient TC = 25°C TC = 100°C TC = 25°C, pulse width limited by TJM TC = 25°C

IXYS
IXYS
pdf
7 IRFP360
N-Channel MOSFET Transistor

INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification IRFP360 FEATURES ·Drain Current –ID= 23A@ TC=25℃ ·Drain Source Voltage- : VDSS= 400V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.2Ω(Max) ·Fast Switching DESCRIPTION ·Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=

Inchange Semiconductor
Inchange Semiconductor
pdf
6 IRFP360
Power MOSFET ( Transistor )

DataSheet 4 U .com www.DataSheet4U DataSheet 4 U .com www.DataSheet4U DataSheet 4 U .com www.DataSheet4U DataSheet 4 U .com

International Rectifier
International Rectifier
pdf
5 IRFP360
N-Channel Power MOSFET / Transistor

IRFP360 Data Sheet July 1999 File Number 2290.3 23A, 400V, 0.200 Ohm, N-Channel Power MOSFET This advanced power MOSFET is designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such a

Intersil Corporation
Intersil Corporation
pdf
4 IRFP360
Trans MOSFET N-CH 400V 23A 3-Pin(3+Tab) TO-247AC

New Jersey Semiconductor
New Jersey Semiconductor
pdf

[1]    [2]    

List of most widely used semiconductors

Part Number Function Manufacturers PDF
1N4007

The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V.

Vishay Semiconductor
Vishay
pdf
LM317

This is a popular adjustable voltage regulator.
( 1.2V to 37V)

On Semiconductor
ON Semiconductor
pdf

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