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IRFP2907 PDF Datasheet Search Results

No Part number Description ( Function ) Manufacturers PDF
5 IRFP2907
Power MOSFET

PD -93906D IRFP2907 AUTOMOTIVE MOSFET HEXFET® Power MOSFET Typical Applications l Integrated Starter Alternator l 42 Volts Automotive Electrical Systems D VDSS = 75V Benefits l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax Description Specifically design

International Rectifier
International Rectifier
pdf
4 IRFP2907B
HEXFET Power MOSFET Die in Wafer Form

PD - 93777 IRFC2907B HEXFET® l Power MOSFET Die in Wafer Form D 100% Tested at Probe l Available in Tape and Reel, Chip Pack, Sawn on Film and Gel Pack** l Ultra Low On-Resistance Electrical Characteristics * Parameter V(BR)DSS RDS(on)*** VGS(th) IDSS IGSS TJ TSTG Description Drain-to-Source Breakdown Voltage Static Drain-to-Source On-Resistance Gate Th

International Rectifier
International Rectifier
pdf
3 IRFP2907PBF
Power MOSFET

Typical Applications l Telecom applications requiring soft start Benefits l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free Description This Stripe Planar design of HEXFET® Power MOSFETs utilizes the lastest processing techniques to achieve extrem

International Rectifier
International Rectifier
pdf
2 IRFP2907Z
AUTOMOTIVE MOSFET

PD - 95873 AUTOMOTIVE MOSFET IRFP2907Z HEXFET® Power MOSFET D Features l l l l l Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax VDSS = 75V RDS(on) = 4.5mΩ‰ G S Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes

International Rectifier
International Rectifier
pdf
1 IRFP2907ZPBF
HEXFET Power MOSFET

AUTOMOTIVE MOSFET PD - 95480 IRFP2907ZPbF Features l l l l l l Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free HEXFET® Power MOSFET D VDSS = 75V RDS(on) = 4.5mΩ‰ G S Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the l

International Rectifier
International Rectifier
pdf



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