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Datasheet IRFP260N Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 2 | IRFP260N | Power MOSFET ( Transistor ) PD - 94004B
IRFP260N
l Advanced Process Technology l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Ease of Paralleling l Simple Drive Requirements
HEXFET® Power MOSFET
D
VDSS = 200V
RDS(on) = 0.04Ω
G
ID = 50A
S
Description
Fifth Generation HEXF |
 International Rectifier |
 |
| 1 | IRFP260NPBF | HEXFET Power MOSFET PD - 95010
IRFP260NPbF
HEXFET® Power MOSFET
Advanced Process Technology Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Ease of Paralleling l Simple Drive Requirements l Lead-Free Description
l l
D
VDSS = 200V RDS(on) = 0.04Ω
G S
ID = 50A
Fifth |
International Rectifier |
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