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IRFP240 PDF Datasheet Search Results

No Part number Description ( Function ) Manufacturers PDF
10 IRFP240
Power MOSFET

International Rectifier
International Rectifier
pdf
9 IRFP240
Power MOSFET

IRFP240, SiHFP240 Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration VGS = 10 V 70 13 39 Single D FEATURES 200 0.18 • • • • • • • Dynamic dV/dt Rating Repetitive Avalanche Rated Isolated Central Mounting Hole Fast Switching Ease of Paralleling Simple Drive Requirements Lead (Pb

Vishay Siliconix
Vishay Siliconix
pdf
8 IRFP240
N-Channel Power MOSFET

IRFP240 Data Sheet July 1999 File Number 2087.4 20A, 200V, 0.180 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such

Intersil Corporation
Intersil Corporation
pdf
7 IRFP240
N-Channel MOSFET Transistor

INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification IRFP240 FEATURES ·Drain Current –ID= 20A@ TC=25℃ ·Drain Source Voltage- : VDSS= 200V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.18Ω(Max) ·Fast Switching DESCRIPTION ·Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta

Inchange Semiconductor
Inchange Semiconductor
pdf
6 IRFP240A
Power MOSFET

     )($785(6 Qýýý$YDODQFKHýý5XJJHGýý7HFKQRORJ Qýýý5XJJHGýý*DWHýý2[LGHýý7HFKQRORJý Qýýý/RZHUýý,QSXWýý&DSDFLWDQFH Qýýý,PSURYHGýý*DWHýý&KDUJH Qýýý([WHQGHGýý6DIHýý2SHUDWLQJýý$UHD Qýýý/RZHUýý/HDNDJHýý&XUUHQWýýãýýìíýPýý$ýõ0D[ïôýý#ýý9'6ý ýëíí9 Qýýý/RZHUýý5'6õ21ôýýãýýíïì

Samsung
Samsung
pdf
5 IRFP240A
N-Channel MOSFET Transistor

INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification IRFP240A FEATURES ·Drain Current –ID= 20A@ TC=25℃ ·Drain Source Voltage- : VDSS= 200V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.18Ω(Max) ·Fast Switching DESCRIPTION ·Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(T

Inchange Semiconductor
Inchange Semiconductor
pdf



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