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IRFBC40 PDF Datasheet Search Results

No Part number Description ( Function ) Manufacturers PDF
20 IRFBC40
Power MOSFET(Vdss=600V/ Rds(on)max=1.2ohm/ Id=6.2A)

International Rectifier
International Rectifier
pdf
19 IRFBC40
Power MOSFET

IRFBC40, SiHFBC40 Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration VGS = 10 V 60 8.3 30 Single D FEATURES 600 1.2 • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Fast Switching • Ease of Paralleling • Simple Drive Requirements • Compliant to RoHS Directive 2002/95/EC Available RoHS* COMPLIANT

Vishay
Vishay
pdf
18 IRFBC40
N-Channel Power MOSFETs

Semiconductor IRFBC40, IRFBC42 6.2A and 5.4A, 600V, 1.2 and 1.6 Ohm, N-Channel Power MOSFETs Description These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designe

Harris
Harris
pdf
17 IRFBC40
N-Channel Power MOSFET

IRFBC40 Data Sheet January 2002 6.2A, 600V, 1.200 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching r

Fairchild Semiconductor
Fairchild Semiconductor
pdf
16 IRFBC40
N - CHANNEL 600V - 1.0ohm - 6.2 A - TO-220 PowerMESH] MOSFET

® IRFBC40 N - CHANNEL 600V - 1.0 Ω - 6.2 A - TO-220 PowerMESH™ MOSFET TYPE IRFBC40 s s s s s V DSS 600 V R DS(on) < 1.2 Ω ID 6.2 A TYPICAL RDS(on) = 1.0 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED 2 3 DESCRIPTION This power MOSFET is designed using the company’s consolidated strip layout-based M

STMicroelectronics
STMicroelectronics
pdf
15 IRFBC40
6.2A/ 600V/ 1.200 Ohm/ N-Channel Power MOSFET

IRFBC40 Data Sheet July 1999 File Number 2157.3 6.2A, 600V, 1.200 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications suc

Intersil Corporation
Intersil Corporation
pdf


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