No | Part number | Description ( Function ) | Manufacturers | |
5 | IRF9510 | 3.0A/ 100V/ 1.200 Ohm/ P-Channel Power MOSFET IRF9510 Data Sheet July 1999 File Number 2214.4 3.0A, 100V, 1.200 Ohm, P-Channel Power MOSFET This P-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such |
Intersil Corporation |
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4 | IRF9510 | Power MOSFET(Vdss=-100V/ Rds(on)=1.2ohm/ Id=-4.0A) |
International Rectifier |
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3 | IRF9510 | P-Channel Power MOSFET http:// |
ETC |
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2 | IRF9510S | Power MOSFET(Vdss=-100V/ Rds(on)=1.2ohm/ Id=-4.0A) |
International Rectifier |
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1 | IRF9510S | Power MOSFET ( Transistor ) Power MOSFET IRF9510S, SiHF9510S Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration - 100 VGS = - 10 V 8.7 2.2 4.1 Single 1.2 D2PAK (TO-263) S G GD S D P-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free and Halogen-free Lead (Pb)-free Note a. See device orientation. D2PAK (TO-263) SiHF9510S-GE3 IRF9510SPbF |
Vishay |
List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
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LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
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6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |