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Datasheet IRF9130 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 5 | IRF9130 | P-CHANNEL POWER MOSFETS |
 Samsung semiconductor |
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| 4 | IRF9130 | P-CHANNEL POWER MOSFET IRF9130
MECHANICAL DATA Dimensions in mm (inches)
39.95 (1.573) max. 30.40 (1.197) 30.15 (1.187) 17.15 (0.675) 16.64 (0.655)
P–CHANNEL POWER MOSFET
VDSS ID(cont) RDS(on)
FEATURES
1
11.18 (0.440) 10.67 (0.420)
26.67 (1.050) max.
4.09 (0.161) 3.84 (0.151) dia. 2 plcs.
2
–100V –11A 0.2W
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 Seme LAB |
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| 3 | IRF9130 | -12A/ -100V/ 0.30 Ohm/ P-Channel Power MOSFET IRF9130
Data Sheet February 1999 File Number
2220.3
-12A, -100V, 0.30 Ohm, P-Channel Power MOSFET
These are P-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the brea |
 Intersil Corporation |
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| 2 | IRF9130 | TRANSISTORS P-CHANNEL(Vdss=-100V/ Rds(on)=0.30ohm/ Id=-11A) PD - 90549C
IRF9130 REPETITIVE A V ALANCHE AND dv/dt RATED JANTX2N6804 HEXFET TRANSISTORS JANTXV2N6804 THRU-HOLE (TO-204AA/AE) [REF:MIL-PRF-19500/562] 100V, P-CHANNEL
Product Summary
Part Number IRF9130 BVDSS -100V RDS(on) 0.30 Ω ID -11A
The HEXFETtechnology is the key to International Re |
 International Rectifier |
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