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IRF840 PDF Datasheet Search Results

No Part number Description ( Function ) Manufacturers PDF
48 IRF840
TRANSISTORS N-CHANNEL

International Rectifier
International Rectifier
pdf
47 IRF840
Trans MOSFET N-CH 500V 8A 3-Pin(3+Tab) TO-220AB

New Jersey Semiconductor
New Jersey Semiconductor
pdf
46 IRF840
PowerMOS transistor Avalanche energy rated

Philips Semiconductors Product specification PowerMOS transistor Avalanche energy rated FEATURES • Repetitive Avalanche Rated • Fast switching • High thermal cycling performance • Low thermal resistance g IRF840 SYMBOL d QUICK REFERENCE DATA VDSS = 500 V ID = 8.5 A RDS(ON) ≤ 0.85 Ω s GENERAL DESCRIPTION N-channel, enhancement mode field-effect power transistor

NXP
NXP
pdf
45 IRF840
Power MOSFET

Power MOSFET IRF840, SiHF840 Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 500 VGS = 10 V 63 9.3 32 Single 0.85 D TO-220AB G S D G S N-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free SnPb FEATURES • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Fast Switching • Ease of Paralleling • S

Vishay
Vishay
pdf
44 IRF840
Power MOSFET

IRF840 Power MOSFET VDSS = 500V, RDS(on) = 0.85 ohm, ID = 8.0 A D G N Channel S Symbol ELECTRICAL CHARACTERISICS at Tj = 25 C Maximum. Unless stated Otherwise Parameter Symbol Test Conditions Drain to Source Breakdown Voltage Drain to Source Leakage Current Gate to Source Leakage Current Gate Threshold Voltage V(BR)DSS VGS = 0 VDC, ID = 250µA IDSS VDS = 500VDC, VGS

TRANSYS
TRANSYS
pdf
43 IRF840
N-CHANNEL POWER MOSFETS

Samsung semiconductor
Samsung semiconductor
pdf



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