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IRF640 PDF Datasheet Search Results

No Part number Description ( Function ) Manufacturers PDF
31 IRF640
Power MOSFET(Vdss=200V/ Rds(on)=0.18ohm/ Id=18A)

International Rectifier
International Rectifier
pdf
30 IRF640
Power MOSFET

IRF640, SiHF640 Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration VGS = 10 V 70 13 39 Single D FEATURES 200 0.18 • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Fast Switching • Ease of Paralleling • Simple Drive Requirements • Compliant to RoHS Directive 2002/95/EC Available RoHS* COMPLIANT

Vishay
Vishay
pdf
29 IRF640
N-channel TrenchMOS transistor

Philips Semiconductors Product specification N-channel TrenchMOS™ transistor IRF640, IRF640S FEATURES • ’Trench’ technology • Low on-state resistance • Fast switching • Low thermal resistance SYMBOL d QUICK REFERENCE DATA VDSS = 200 V ID = 16 A g RDS(ON) ≤ 180 mΩ s GENERAL DESCRIPTION N-channel, enhancement mode field-effect power transistor using Tren

NXP
NXP
pdf
28 IRF640
N-Channel Power MOSFET

SEMICONDUCTOR IRF640 Series RRooHHSS DESCRIPTION Nell High Power Products N-Channel Power MOSFET (18A, 200Volts) The Nell IRF640 are N-channel enhancement mode silicon gate power field effect transistors. They are designed, tested and guaranteed to withstand level of energy in breakdown avalanche made of operation. They are designed as an extremely efficient and reliable de

nELL
nELL
pdf
27 IRF640
N-Channel MOSFET Transistor

INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification IRF640 DESCRIPTION ·Drain Current –ID= 18A@ TC=25℃ ·Drain Source Voltage- : VDSS= 200V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.18Ω(Max) ·Fast Switching Speed ·Low Drive Requirement APPLICATIONS ·Designed for low voltage, high speed power switching applications such as sw

Inchange Semiconductor
Inchange Semiconductor
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26 IRF640
N-CHANNEL MOSFET

IRF640 Rev.E Mar.-2016 DATA SHEET 描述 / Descriptions TO-220 塑封封装 N 沟道 MOS 场效应管。N-CHANNEL MOSFET in a TO-220 Plastic Package. 特征 / Features 低栅电荷,低反馈电容,开关速度快。 Low gate charge, low crss, fast switching. 用途 / Applications 用于高效 DC/DC 转换和功率开关。 These devices are well suited for high efficienc

BLUE ROCKET ELECTRONICS
BLUE ROCKET ELECTRONICS
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