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Datasheet IRF640 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
31 | IRF640 | N-CHANNEL MOSFET IRF640
Rev.E Mar.-2016
DATA SHEET
描述 / Descriptions TO-220 塑封封装 N 沟道 MOS 场效应管。N-CHANNEL MOSFET in a TO-220 Plastic Package.
特征 / Features
低栅电荷,低反馈电容,开关速度快。 Low gate charge, low crss, fast switching.
用途 / Applications
用于高效 D |
BLUE ROCKET ELECTRONICS |
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30 | IRF640 | N-Channel Power MOSFET / Transistor SEMICONDUCTOR
IRF640 Series RRooHHSS
DESCRIPTION
Nell High Power Products
N-Channel Power MOSFET (18A, 200Volts)
The Nell IRF640 are N-channel enhancement mode silicon gate power field effect transistors.
They are designed, tested and guaranteed to withstand level of energy in breakdown avalanch |
nELL |
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29 | IRF640 | N-Channel Enhancement Mode POWER MOSFET N-Channel Enhancement Mode POWER MOSFET
P b Lead(Pb)-Free
3 DRAIN
Features:
1 GATE
*Super High Dense Cell Design For Low RDS(ON)
R DS(ON) <0.18 Ω@V GS =10V
* Single Pulse Avalanche Energy Rated
* SOA is Power Dissipation Limited
* Nanosecond Switching Speed
* Linear Transfer Characteristi |
WEITRON |
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28 | IRF640 | N-Channel MOSFET Transistor INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
IRF640
DESCRIPTION ·Drain Current –ID= 18A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 200V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 0.18Ω(Max) ·Fast Switching Speed ·Low Drive Requirement
APPLICATION |
Inchange Semiconductor |
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