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IRF540N PDF Datasheet

The IRF540N is Power MOSFET ( Transistor ), Hexfet Power MOSFET(vdss=100V, Id=33a). It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.




Notice


Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

Searched Lists

No Part number Description ( Function ) Manufacturers PDF
8 IRF540N
HEXFET Power MOSFET(Vdss=100V, Id=33A)

PD - 91341B IRF540N HEXFET® Power MOSFET l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 100V RDS(on) = 44mΩ G S ID = 33A Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low

International Rectifier
International Rectifier
pdf
7 IRF540N
Power MOSFET ( Transistor )

Data Sheet January 2002 IRF540N 33A, 100V, 0.040 Ohm, N-Channel, Power MOSFET Packaging JEDEC TO-220AB SOURCE DRAIN GATE Symbol DRAIN (FLANGE) IRF540N D G S Features • Ultra Low On-Resistance - rDS(ON) = 0.040Ω, VGS = 10V • Simulation Models - Temperature Compensated PSPICE™ and SABER© Electrical Models - Spice and SABER© Thermal Impedance Models - www.fairch

Fairchild Semiconductor
Fairchild Semiconductor
pdf
6 IRF540N
33A/ 100V/ 0.040 Ohm/ N-Channel Power MOSFET

IRF540N TM Data Sheet March 2000 File Number 4842 33A, 100V, 0.040 Ohm, N-Channel Power MOSFET Packaging JEDEC TO-220AB SOURCE DRAIN GATE Features • Ultra Low On-Resistance - rDS(ON) = 0.040Ω, VGS = 10V • Simulation Models - Temperature Compensated PSPICE™ and SABER© Electrical Models - Spice and SABER© Thermal Impedance Models - www.intersil.com • Peak Curren

Intersil Corporation
Intersil Corporation
pdf
5 IRF540N
Trans MOSFET N-CH 100V 33A 3-Pin(3+Tab) TO-220AB

New Jersey Semiconductor
New Jersey Semiconductor
pdf
4 IRF540NL
Power MOSFET ( Transistor )

l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and rug

International Rectifier
International Rectifier
pdf
3 IRF540NL
Trans MOSFET N-CH 100V 33A 3-Pin(3+Tab) TO-262

New Jersey Semiconductor
New Jersey Semiconductor
pdf

[1]    [2]    

List of most widely used semiconductors

Part Number Function Manufacturers PDF
1N4007

The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V.

Vishay Semiconductor
Vishay
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LM317

This is a popular adjustable voltage regulator.
( 1.2V to 37V)

On Semiconductor
ON Semiconductor
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 6N137  |   LM393   |   2N3906    |   2N2222   |   TIP120   |

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