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Datasheet IRF530N Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 12 | IRF530N | N-channel TrenchMOS transistor Philips Semiconductors
Product specification
N-channel TrenchMOS™ transistor
IRF530N
FEATURES
• ’Trench’ technology • Low on-state resistance • Fast switching • Low thermal resistance
SYMBOL
d
QUICK REFERENCE DATA VDSS = 100 V ID = 17 A
g
RDS(ON) ≤ 110 mΩ
s
GENERAL DESCRIPT |
 NXP Semiconductors |
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| 11 | IRF530N | 22A/ 100V/ 0.064 Ohm/ N-Channel Power MOSFET IRF530N
TM
Data Sheet
March 2000
File Number
4843
22A, 100V, 0.064 Ohm, N-Channel Power MOSFET Packaging
JEDEC TO-220AB
SOURCE DRAIN GATE
Features
• Ultra Low On-Resistance - rDS(ON) = 0.064Ω, VGS = 10V • Simulation Models - Temperature Compensated PSPICE™ and SABER© Electrical Models |
 Intersil Corporation |
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| 10 | IRF530N | Power MOSFET(Vdss=100V/ Rds(on)=90mohm/ Id=17A) PD - 91351
IRF530N
HEXFET® Power MOSFET
l l l l l l
Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated
D
VDSS = 100V RDS(on) = 90mΩ
G S
ID = 17A
Description
Advanced HEXFET® Power MOSFETs from Internat |
 International Rectifier |
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| 9 | IRF530N | Trans MOSFET N-CH 100V 17A 3-Pin(3+Tab) TO-220AB |
 New Jersey Semiconductor |
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