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IRF530 PDF Datasheet Search Results

No Part number Description ( Function ) Manufacturers PDF
39 IRF530
Trans MOSFET N-CH 100V 14A 3-Pin(3+Tab) TO-220AB

New Jersey Semiconductor
New Jersey Semiconductor
pdf
38 IRF530
Power MOSFET(Vdss=100V/ Rds(on)=0.16ohm/ Id=14A)

International Rectifier
International Rectifier
pdf
37 IRF530
Power MOSFET

IRF530, SiHF530 Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration VGS = 10 V 26 5.5 11 Single D FEATURES 100 0.16 • • • • • • • Dynamic dV/dt Rating Repetitive Avalanche Rated 175 °C Operating Temperature Fast Switching Ease of Paralleling Simple Drive Requirements Compliant to RoHS Directive 20

Vishay
Vishay
pdf
36 IRF530
Power Field Effect Transistor

IRF530 Product Preview TMOS E−FET.™ Power Field Effect Transistor N−Channel Enhancement−Mode Silicon Gate This advanced TMOS power FET is designed to withstand high energy in the avalanche and commutation modes. This new energy efficient design also offers a drain−to−source diode with a fast recovery time. Designed for low voltage, high speed switching applications

ON Semiconductor
ON Semiconductor
pdf
35 IRF530
N-CHANNEL POWER MOSFETS

Samsung semiconductor
Samsung semiconductor
pdf
34 IRF530
N-Channel Power MOSFETs

Data Sheet IRF530 February 2002 [ /Title (IRF53 0, RF1S5 30SM) /Subject (14A, 100V, 0.160 Ohm, NChannel Power MOSFETs) /Autho r () /Keywords (14A, 100V, 0.160 Ohm, NChannel Power MOSFETs, Intersil Corporation, TO220AB , TO263AB 14A, 100V, 0.160 Ohm, N-Channel Power MOSFETs These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced po

Fairchild Semiconductor
Fairchild Semiconductor
pdf



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