Datasheet IRF5210SPBF Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	IRF5210SPBF	HEXFET Power MOSFET PD - 97049A IRF5210SPbF IRF5210LPbF HEXFET® Power MOSFET l l l l l l l l Advanced Process Technology Ultra Low On-Resistance 150°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Some Parameters are Different from IRF5210S/L P-Channel Lead-Free D VDSS = -100V RDS(	International Rectifier

IRF5210S Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
IRF5210SPBF	HEXFET Power MOSFET PD - 97049A IRF5210SPbF IRF5210LPbF HEXFET® Power MOSFET l l l l l l l l Advanced Process Technology Ultra Low On-Resistance 150°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Some Parameters are Different from IRF5210S/L P-Channel Lead-Free	International Rectifier
IRF5210S	Power MOSFET(Vdss=-100V/ Rds(on)=0.06ohm/ Id=-40A) PD - 91405C IRF5210S/L HEXFET® Power MOSFET Advanced Process Technology Surface Mount (IRF5210S) l Low-profile through-hole (IRF5210L) l 175°C Operating Temperature l Fast Switching l P-Channel l Fully Avalanche Rated Description l l D VDSS = -100V RDS(on) = 0.06Ω G ID =	International Rectifier
IRF5210S	Trans MOSFET P-CH 100V 40A 3-Pin(2+Tab) D2PAK	New Jersey Semiconductor

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Número de pieza	Descripción	Fabricantes	PDF
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