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IRF510 PDF Datasheet Search Results

No Part number Description ( Function ) Manufacturers PDF
14 IRF510
Trans MOSFET N-CH 100V 5.6A 3-Pin(3+Tab) TO-220AB

New Jersey Semiconductor
New Jersey Semiconductor
pdf
13 IRF510
Power MOSFET(Vdss=100V/ Rds(on)=0.54ohm/ Id=5.6A)

International Rectifier
International Rectifier
pdf
12 IRF510
Power MOSFET

Power MOSFET IRF510, SiHF510 Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 100 VGS = 10 V 8.3 2.3 3.8 Single 0.54 TO-220AB D G S D G ORDERING INFORMATION Package Lead (Pb)-free SnPb S N-Channel MOSFET FEATURES • Dynamic dV/dt Rating • Repetitive Avalanche Rated • 175 °C Operating Temperature • Fast Swit

Vishay
Vishay
pdf
11 IRF510
N-Channel Power MOSFET

Data Sheet January 2002 IRF510 5.6A, 100V, 0.540 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching

Fairchild Semiconductor
Fairchild Semiconductor
pdf
10 IRF510
N-Channel MOSFET Transistor

INCHANGE Semiconductor isc N-Channel Mosfet Transistor isc Product Specification IRF510 ·FEATURES ·Low RDS(on) ·VGS Rated at ±20V ·Silicon Gate for Fast Switching Speed ·Rugged ·Low Drive Requirements ·DESCRITION ·Designed especially for high voltage,high speed applications, such as off-line switching power supplies , UPS,AC and DC motor controls,relay and solenoid

Inchange Semiconductor
Inchange Semiconductor
pdf
9 IRF510
N-Channel Enhancement-Mode Vertical DMOS Power FETs

Supertex  Inc
Supertex Inc
pdf



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