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IRF4905 PDF Datasheet Search Results

No Part number Description ( Function ) Manufacturers PDF
7 IRF4905
Power MOSFET(Vdss=-55V/ Rds(on)=0.02ohm/ Id=-74A)

PD - 9.1280C IRF4905 HEXFET® Power MOSFET Advanced Process Technology Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l P-Channel l Fully Avalanche Rated Description l l D VDSS = -55V G S RDS(on) = 0.02Ω ID = -74A Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extreme

International Rectifier
International Rectifier
pdf
6 IRF4905
P-Channel MOSFET Transistor

INCHANGE Semiconductor isc P-Channel MOSFET Transistor isc Product Specification IRF4905 FEATURES ·Advanced Process Technology ·Ultra Low On-Resistance ·Dynamic dv/dt Rating ·175°C Operating Temperature ·Fast Switching ·P-Channel ·Fully Avalanche Rated DESCRIPTION ·This benefit, combined with the fast switching speed and ruggedized device . ABSOLUTE MAXIMUM RATINGS(

Inchange Semiconductor
Inchange Semiconductor
pdf
5 IRF4905L
Power MOSFET(Vdss=-55V/ Rds(on)=0.02ohm/ Id=-74A)

PD - 9.1478A IRF4905S/L HEXFET® Power MOSFET Advanced Process Technology Surface Mount (IRF4905S) l Low-profile through-hole (IRF4905L) l 175°C Operating Temperature l Fast Switching l P-Channel l Fully Avalanche Rated Description l l D VDSS = -55V RDS(on) = 0.02Ω G ID = -74A S Fifth Generation HEXFETs from International Rectifier utilize advanced processing technique

International Rectifier
International Rectifier
pdf
4 IRF4905LPBF
HEXFET Power MOSFET

PD - 97034 IRF4905SPbF IRF4905LPbF Features O O O O O O HEXFET® Power MOSFET D O Advanced Process Technology Ultra Low On-Resistance 150°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Some Parameters Are Differrent from IRF4905S Lead-Free VDSS = -55V RDS(on) = 20mΩ G S ID = -42A D Description Features of this design are a 150°C junc

International Rectifier
International Rectifier
pdf
3 IRF4905PbF
Power MOSFET

Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching P-Channel Fully Avalanche Rated Lead-Free Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ru

International Rectifier
International Rectifier
pdf
2 IRF4905S
Power MOSFET(Vdss=-55V/ Rds(on)=0.02ohm/ Id=-74A)

PD - 9.1478A IRF4905S/L HEXFET® Power MOSFET Advanced Process Technology Surface Mount (IRF4905S) l Low-profile through-hole (IRF4905L) l 175°C Operating Temperature l Fast Switching l P-Channel l Fully Avalanche Rated Description l l D VDSS = -55V RDS(on) = 0.02Ω G ID = -74A S Fifth Generation HEXFETs from International Rectifier utilize advanced processing technique

International Rectifier
International Rectifier
pdf



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