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IRF4905 PDF Datasheet

The IRF4905 is P-channel MOSFET Transistor, Power MOSFET(vdss=-55v/ Rds(on)=0.02ohm/ Id=-74a). It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.




Notice


Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

Searched Lists

No Part number Description ( Function ) Manufacturers PDF
7 IRF4905
P-Channel MOSFET Transistor

INCHANGE Semiconductor isc P-Channel MOSFET Transistor isc Product Specification IRF4905 FEATURES ·Advanced Process Technology ·Ultra Low On-Resistance ·Dynamic dv/dt Rating ·175°C Operating Temperature ·Fast Switching ·P-Channel ·Fully Avalanche Rated DESCRIPTION ·This benefit, combined with the fast switching speed and ruggedized device . ABSOLUTE MAXIMUM RATINGS(

Inchange Semiconductor
Inchange Semiconductor
pdf
6 IRF4905
Power MOSFET(Vdss=-55V/ Rds(on)=0.02ohm/ Id=-74A)

PD - 9.1280C IRF4905 HEXFET® Power MOSFET Advanced Process Technology Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l P-Channel l Fully Avalanche Rated Description l l D VDSS = -55V G S RDS(on) = 0.02Ω ID = -74A Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extreme

International Rectifier
International Rectifier
pdf
5 IRF4905L
Power MOSFET(Vdss=-55V/ Rds(on)=0.02ohm/ Id=-74A)

PD - 9.1478A IRF4905S/L HEXFET® Power MOSFET Advanced Process Technology Surface Mount (IRF4905S) l Low-profile through-hole (IRF4905L) l 175°C Operating Temperature l Fast Switching l P-Channel l Fully Avalanche Rated Description l l D VDSS = -55V RDS(on) = 0.02Ω G ID = -74A S Fifth Generation HEXFETs from International Rectifier utilize advanced processing technique

International Rectifier
International Rectifier
pdf
4 IRF4905LPBF
HEXFET Power MOSFET

PD - 97034 IRF4905SPbF IRF4905LPbF Features O O O O O O HEXFET® Power MOSFET D O Advanced Process Technology Ultra Low On-Resistance 150°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Some Parameters Are Differrent from IRF4905S Lead-Free VDSS = -55V RDS(on) = 20mΩ G S ID = -42A D Description Features of this design are a 150°C junc

International Rectifier
International Rectifier
pdf
3 IRF4905PbF
Power MOSFET ( Transistor )

Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching P-Channel Fully Avalanche Rated Lead-Free Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ru

International Rectifier
International Rectifier
pdf
2 IRF4905S
Power MOSFET(Vdss=-55V/ Rds(on)=0.02ohm/ Id=-74A)

PD - 9.1478A IRF4905S/L HEXFET® Power MOSFET Advanced Process Technology Surface Mount (IRF4905S) l Low-profile through-hole (IRF4905L) l 175°C Operating Temperature l Fast Switching l P-Channel l Fully Avalanche Rated Description l l D VDSS = -55V RDS(on) = 0.02Ω G ID = -74A S Fifth Generation HEXFETs from International Rectifier utilize advanced processing technique

International Rectifier
International Rectifier
pdf

[1]    [2]    

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