No | Part number | Description ( Function ) | Manufacturers | |
7 | IRF4905 | P-Channel MOSFET Transistor INCHANGE Semiconductor isc P-Channel MOSFET Transistor isc Product Specification IRF4905 FEATURES ·Advanced Process Technology ·Ultra Low On-Resistance ·Dynamic dv/dt Rating ·175°C Operating Temperature ·Fast Switching ·P-Channel ·Fully Avalanche Rated DESCRIPTION ·This benefit, combined with the fast switching speed and ruggedized device . ABSOLUTE MAXIMUM RATINGS( |
Inchange Semiconductor |
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6 | IRF4905 | Power MOSFET(Vdss=-55V/ Rds(on)=0.02ohm/ Id=-74A) PD - 9.1280C IRF4905 HEXFET® Power MOSFET Advanced Process Technology Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l P-Channel l Fully Avalanche Rated Description l l D VDSS = -55V G S RDS(on) = 0.02Ω ID = -74A Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extreme |
International Rectifier |
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5 | IRF4905L | Power MOSFET(Vdss=-55V/ Rds(on)=0.02ohm/ Id=-74A) PD - 9.1478A IRF4905S/L HEXFET® Power MOSFET Advanced Process Technology Surface Mount (IRF4905S) l Low-profile through-hole (IRF4905L) l 175°C Operating Temperature l Fast Switching l P-Channel l Fully Avalanche Rated Description l l D VDSS = -55V RDS(on) = 0.02Ω G ID = -74A S Fifth Generation HEXFETs from International Rectifier utilize advanced processing technique |
International Rectifier |
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4 | IRF4905LPBF | HEXFET Power MOSFET PD - 97034 IRF4905SPbF IRF4905LPbF Features O O O O O O HEXFET® Power MOSFET D O Advanced Process Technology Ultra Low On-Resistance 150°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Some Parameters Are Differrent from IRF4905S Lead-Free VDSS = -55V RDS(on) = 20mΩ G S ID = -42A D Description Features of this design are a 150°C junc |
International Rectifier |
|
3 | IRF4905PbF | Power MOSFET ( Transistor ) Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching P-Channel Fully Avalanche Rated Lead-Free Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ru |
International Rectifier |
|
2 | IRF4905S | Power MOSFET(Vdss=-55V/ Rds(on)=0.02ohm/ Id=-74A) PD - 9.1478A IRF4905S/L HEXFET® Power MOSFET Advanced Process Technology Surface Mount (IRF4905S) l Low-profile through-hole (IRF4905L) l 175°C Operating Temperature l Fast Switching l P-Channel l Fully Avalanche Rated Description l l D VDSS = -55V RDS(on) = 0.02Ω G ID = -74A S Fifth Generation HEXFETs from International Rectifier utilize advanced processing technique |
International Rectifier |
List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
|
LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
|
6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |