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IRF3205 PDF Datasheet Search Results

No Part number Description ( Function ) Manufacturers PDF
21 IRF3205
Power MOSFET(Vdss=55V/ Rds(on)=8.0mohm/ Id=110A)

PD-91279E IRF3205 HEXFET® Power MOSFET l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 55V RDS(on) = 8.0mΩ G S ID = 110A… Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely lo

International Rectifier
International Rectifier
pdf
20 IRF3205
Power MOSFET

IRF3205 HEXFET ® Power MOSFET z Advanced Process Technology z Ultra Low On-Resistance z Dynamic dv/dt Rating z 175 Operating Temperature z Fast Switching z Fully Avalanche Rated VDSS=55V RDS(on)=8.0mΩ ID=110A Description Advanced HEXFET ® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon a

ART CHIP
ART CHIP
pdf
19 IRF3205
N-Channel Trench Process Power MOSFET Transistor

IRF3205 ® Pb Free Plating Product IRF3205 Pb N-Channel Trench Process Power MOSFET Transistor General Description The IRF3205 is N-channel MOS Field Effect Transistor designed for high current switching applications. Rugged EAS capability and ultra low RDS(ON) is suitable for PWM, load switching . Features ● VDS=55V; ID=105A@ VGS=10V; RDS(ON)<6.0mΩ @ VGS=10V ● Ultra

Thinki Semiconductor
Thinki Semiconductor
pdf
18 IRF3205
N-Channel Power MOSFET

SEMICONDUCTOR IRF3205 Series N-Channel Power MOSFET (110A, 55Volts) RoHS RoHS Nell High Power Products DESCRIPTION The Nell IRF3205 is a three-terminal silicon device with current conduction capability of 110A, fast switching speed, low on-state resistance, breakdown voltage rating of 55V, and max. threshold voltage of 4 volts. They are designed as an extremely efficient an

nELL
nELL
pdf
17 IRF3205
N-Channel Power MOSFET

SEMICONDUCTOR TECHNICAL DATA N-Channel Power MOSFET (55V/120A) Purpose Suited for low voltage applications such as automotive, DC/DC Converters, and high efficiency switching for power management in portable and battery operated products Feature Low RDS(on),low gate charge,low Crss,fast switching. IRF3205 Absolute maximum ratings(Ta=25℃) Parameter Drain-Source Voltage Drai

First Silicon
First Silicon
pdf
16 IRF3205
N-Channel MOSFET Transistor

INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification IRF3205 FEATURES ·Drain Current –ID= 110A@ TC=25℃ ·Drain Source Voltage- : VDSS= 55V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.008Ω(Max) Description Advanced HEXFET ® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low o

Inchange Semiconductor
Inchange Semiconductor
pdf



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