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IRF130 PDF Datasheet

The IRF130 is N-channel Power MOSFET, N-channel Power MOSFETs. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.




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Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

Searched Lists

No Part number Description ( Function ) Manufacturers PDF
12 IRF130
N-CHANNEL POWER MOSFETS

Samsung semiconductor
Samsung semiconductor
pdf
11 IRF130
N-CHANNEL POWER MOSFET

IRF130 MECHANICAL DATA Dimensions in mm (inches) 39.95 (1.573) max. 30.40 (1.197) 30.15 (1.187) 17.15 (0.675) 16.64 (0.655) N–CHANNEL POWER MOSFET VDSS ID(cont) RDS(on) FEATURES • HERMETICALLY SEALED TO–3 METAL PACKAGE 1 20.32 (0.800) 18.80 (0.740) dia. 7.87 (0.310) 6.99 (0.275) 1.78 (0.070) 1.52 (0.060) 11.18 (0.440) 10.67 (0.420) 26.67 (1.050) max. 4.09 (0.161) 3

Seme LAB
Seme LAB
pdf
10 IRF130
14A/ 100V/ 0.160 Ohm/ N-Channel Power MOSFET

IRF130 Data Sheet March 1999 File Number 1566.4 14A, 100V, 0.160 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such

Intersil Corporation
Intersil Corporation
pdf
9 IRF130
TRANSISTORS N-CHANNEL(Vdss=100V/ Rds(on)=0.18ohm/ Id=14A)

PD - 90333F IRF130 REPETITIVE A V ALANCHE AND dv/dt RATED JANTX2N6756  HEXFET TRANSISTORS JANTXV2N6756 THRU-HOLE (TO-204AA/AE) [REF:MIL-PRF-19500/542] 100V, N-CHANNEL Product Summary Part Number IRF130 BVDSS 100V RDS(on) 0.18Ω ID 14A The HEXFETtechnology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry and uni

International Rectifier
International Rectifier
pdf
8 IRF130
N-Channel Power MOSFETs/ 20 A/ 60-100 V

Fairchild Semiconductor
Fairchild Semiconductor
pdf
7 IRF130
N-Channel MOSFET Transistor

INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification IRF130 DESCRIPTION ·Drain Current ID=14A@ TC=25℃ ·Drain Source Voltage- : VDSS= 100V(Min) ·Static Drain-Source On-Resistance : RDS(on) =0.18Ω(Max) ·High Power,High Speed Applications APPLICATIONS ·Switching power supplies ·UPS ·Motor controls ·High energy pulse circuits. ABSOLUTE MAX

Inchange Semiconductor
Inchange Semiconductor
pdf

[1]    [2]    

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Vishay Semiconductor
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On Semiconductor
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