No | Part number | Description ( Function ) | Manufacturers | |
12 | IRF130 | N-CHANNEL POWER MOSFETS |
Samsung semiconductor |
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11 | IRF130 | N-CHANNEL POWER MOSFET IRF130 MECHANICAL DATA Dimensions in mm (inches) 39.95 (1.573) max. 30.40 (1.197) 30.15 (1.187) 17.15 (0.675) 16.64 (0.655) N–CHANNEL POWER MOSFET VDSS ID(cont) RDS(on) FEATURES • HERMETICALLY SEALED TO–3 METAL PACKAGE 1 20.32 (0.800) 18.80 (0.740) dia. 7.87 (0.310) 6.99 (0.275) 1.78 (0.070) 1.52 (0.060) 11.18 (0.440) 10.67 (0.420) 26.67 (1.050) max. 4.09 (0.161) 3 |
Seme LAB |
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10 | IRF130 | 14A/ 100V/ 0.160 Ohm/ N-Channel Power MOSFET IRF130 Data Sheet March 1999 File Number 1566.4 14A, 100V, 0.160 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such |
Intersil Corporation |
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9 | IRF130 | TRANSISTORS N-CHANNEL(Vdss=100V/ Rds(on)=0.18ohm/ Id=14A) PD - 90333F IRF130 REPETITIVE A V ALANCHE AND dv/dt RATED JANTX2N6756 HEXFET TRANSISTORS JANTXV2N6756 THRU-HOLE (TO-204AA/AE) [REF:MIL-PRF-19500/542] 100V, N-CHANNEL Product Summary Part Number IRF130 BVDSS 100V RDS(on) 0.18Ω ID 14A The HEXFETtechnology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry and uni |
International Rectifier |
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8 | IRF130 | N-Channel Power MOSFETs/ 20 A/ 60-100 V |
Fairchild Semiconductor |
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7 | IRF130 | N-Channel MOSFET Transistor INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification IRF130 DESCRIPTION ·Drain Current ID=14A@ TC=25℃ ·Drain Source Voltage- : VDSS= 100V(Min) ·Static Drain-Source On-Resistance : RDS(on) =0.18Ω(Max) ·High Power,High Speed Applications APPLICATIONS ·Switching power supplies ·UPS ·Motor controls ·High energy pulse circuits. ABSOLUTE MAX |
Inchange Semiconductor |
List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
|
LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
|
6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |