Datasheet IRF10N40 Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	IRF10N40	Power MOSFET ( Transistor ) ! GENERAL DESCRIPTION This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes. The new energy effici	Suntac Electronic

IRF10 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
IRF1010	N-Channel Power MOSFET / Transistor SEMICONDUCTOR IRF1010 Series N-Channel Power MOSFET (84A, 60Volts) D D RoHS RoHS Nell High Power Products DESCRIPTION The Nell IRF1010 is a three-terminal silicon device with current conduction capability of 84A, fast switching speed, low on-state resistance, breakdown volta	nELL
IRF1010E	Power MOSFET(Vdss=60V/Rds(on)=12mohm/Id=84A PD - 91670 IRF1010E HEXFET® Power MOSFET l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 60V RDS(on) = 12mΩ G S ID = 84A Description Advanced HEXFET® Power	International Rectifier
IRF1010N	Power MOSFET(Vdss=55V/ Rds(on)=11mohm/ Id=85A) PD - 91278 IRF1010N HEXFET® Power MOSFET l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 55V RDS(on) = 11mΩ G S ID = 85A Description Advanced HEXFET® Power	International Rectifier

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Número de pieza	Descripción	Fabricantes	PDF
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