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Datasheet IRF1010E Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 12 | IRF1010E | Power MOSFET(Vdss=60V/Rds(on)=12mohm/Id=84A PD - 91670
IRF1010E
HEXFET® Power MOSFET
l l l l l l
Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated
D
VDSS = 60V RDS(on) = 12mΩ
G S
ID = 84A
Description
Advanced HEXFET® Power MOSFETs from Intern |
 International Rectifier |
 |
| 11 | IRF1010EL | Power MOSFET(Vdss=60V/ Rds(on)=12mohm/ Id=84A) PD - 91720
IRF1010ES IRF1010EL
l l l l l l
Advanced Process Technology Surface Mount (IRF1010ES) Low-profile through-hole (IRF1010EL) 175°C Operating Temperature Fast Switching Fully Avalanche Rated
G
HEXFET® Power MOSFET
D
VDSS = 60V RDS(on) = 12mΩ
Description
Advanced HEXFET® Power MOSFE |
International Rectifier |
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| 10 | IRF1010ELPbF | HEXFET Power MOSFET PD - 95444
Advanced Process Technology l Surface Mount (IRF1010ES) l Low-profile through-hole (IRF1010EL) l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description
l
IRF1010ESPbF IRF1010ELPbF
HEXFET® Power MOSFET
D
VDSS = 60V RDS(on) = 12mΩ
G S
Advanced |
International Rectifier |
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| 9 | IRF1010EPBF | Power MOSFET ( Transistor )
PD - 94965A
IRF1010EPbF
l l l l l l l
Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free
HEXFET® Power MOSFET
D
VDSS = 60V RDS(on) = 12mΩ
G S
ID = 84A
Advanced HEXFET® |
International Rectifier |
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| Número de pieza | Descripción | Fabricantes | |
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