No | Part number | Description ( Function ) | Manufacturers | |
1 | IPB09N03LAG | Power-Transistor IPB09N03LA G OptiMOS®2 Power-Transistor Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1) for target applications • N-channel - Logic level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • Superior thermal resistance • 175 °C operating temperature • dv /dt rated • P |
Infineon Technologies |
0  1  2  3  4  5  6  7  8 9 |
Recommended search results related to IPB09N03LAG |
Part No | Description ( Function) | Manufacturers | |
IPB09N03LA | OptiMOS 2 Power-Transistor IPB09N03LA IPI09N03LA, IPP09N03LA OptiMOS®2 Power-Transistor Features • Ideal for high-frequency dc/dc converters • N-channel • Logic level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • Superior thermal resistance • 175 °C o |
Infineon Technologies AG |
|
AGR09030E | Lateral MOSFET AGR09030E 30 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR09030E is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor (LDMOS) RF power transistor suitable for cellular band, code-division multiple access (CDMA), global syst |
TriQuint Semiconductor |
|
AP0903GH | N-CHANNEL ENHANCEMENT MODE POWER MOSFET Advanced Power Electronics Corp. AP0903GH RoHS-compliant Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low On-resistance ▼ Simple Drive Requirement ▼ Fast Switching Characteristic D G S Description Advanced Power MOSFETs from APEC provide the designer with the bes |
Advanced Power Electronics |
|
AP0903GH-HF | N-CHANNEL ENHANCEMENT MODE POWER MOSFET AP0903GH-HF Halogen-Free Product Advanced Power Electronics Corp. ▼ Low On-resistance ▼ Simple Drive Requirement ▼ Fast Switching Characteristic ▼ RoHS Compliant & Halogen-Free G N-CHANNEL ENHANCEMENT MODE POWER MOSFET D BVDSS RDS(ON) ID 30V 9mΩ 51A S Description |
Advanced Power Electronics |
|
AP0903GM | N-CHANNEL ENHANCEMENT MODE POWER MOSFET Advanced Power Electronics Corp. AP0903GM RoHS-compliant Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low On-resistance ▼ Simple Drive Requirement ▼ Fast Switching Characteristic Description D D D D SO-8 G SS S Advanced Power MOSFETs from APEC provide the designer |
Advanced Power Electronics |
List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
|
LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
|
6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |