No | Part number | Description ( Function ) | Manufacturers | |
7626 | IDT02S60C | Schottky Diode IDT02S60C 2ndGeneration thinQ!TM SiC Schottky Diode Features • Revolutionary semiconductor material - Silicon Carbide • No reverse recovery/ no forward recovery • Temperature independent switching behavior • High surge current capability • Qualified according to JEDEC1) for target applications • Breakdown voltage tested at 5mA2) • Optimized for high temperature o |
Infineon Technologies |
|
7625 | IDT03S60C | Schottky Diode IDT03S60C 2ndGeneration thinQ!TM SiC Schottky Diode Features • Revolutionary semiconductor material - Silicon Carbide • No reverse recovery/ no forward recovery • Temperature independent switching behavior • High surge current capability • Qualified according to JEDEC1) for target applications • Breakdown voltage tested at 5mA2) • Optimized for high temperature o |
Infineon Technologies |
|
7624 | IDT04S60C | 2nd Generation thinQ SiC Schottky Diode IDT04S60C 2ndGeneration thinQ!TM SiC Schottky Diode Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark • No reverse recovery/ No forward recovery • No temperature influence on the switching behavior • High surge current capability • Pb-free lead plating; RoHS compliant • Qualified according to JEDE |
Infineon Technologies AG |
|
7623 | IDT05S60C | 2nd Generation thinQ SiC Schottky Diode IDT05S60C 2nd Generation thinQ!TM SiC Schottky Diode Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark • No reverse recovery / No forward recovery • No temperature influence on the switching behavior • High surge current capability • Pb-free lead plating; RoHs compliant • Qualified according to JE |
Infineon Technologies AG |
|
7622 | IDT06S60C | 2nd Generation thinQ SiC Schottky Diode IDT06S60C 2nd generation thinQ!TM SiC Schottky Diode Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark • No reverse recovery/ No forward recovery • No temperature influence on the switching behavior • High surge current capability • Pb-free lead plating; RoHS compliant • Qualified according to JED |
Infineon Technologies AG |
|
7621 | IDT08S60C | 2nd Generation thinQ SiC Schottky Diode IDT08S60C 2nd Generation thinQ!TM SiC Schottky Diode Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark • No reverse recovery/ No forward recovery • No temperature influence on the switching behavior • High surge current capability • Pb-free lead plating; RoHS compliant • Qualified according to JED |
Infineon Technologies AG |
List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
|
LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
|
6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |