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IDT PDF Datasheet

The IDT is . It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.




Notice


Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

Searched Lists

No Part number Description ( Function ) Manufacturers PDF
7626 IDT02S60C
Schottky Diode

IDT02S60C 2ndGeneration thinQ!TM SiC Schottky Diode Features • Revolutionary semiconductor material - Silicon Carbide • No reverse recovery/ no forward recovery • Temperature independent switching behavior • High surge current capability • Qualified according to JEDEC1) for target applications • Breakdown voltage tested at 5mA2) • Optimized for high temperature o

Infineon Technologies
Infineon Technologies
pdf
7625 IDT03S60C
Schottky Diode

IDT03S60C 2ndGeneration thinQ!TM SiC Schottky Diode Features • Revolutionary semiconductor material - Silicon Carbide • No reverse recovery/ no forward recovery • Temperature independent switching behavior • High surge current capability • Qualified according to JEDEC1) for target applications • Breakdown voltage tested at 5mA2) • Optimized for high temperature o

Infineon Technologies
Infineon Technologies
pdf
7624 IDT04S60C
2nd Generation thinQ SiC Schottky Diode

IDT04S60C 2ndGeneration thinQ!TM SiC Schottky Diode Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark • No reverse recovery/ No forward recovery • No temperature influence on the switching behavior • High surge current capability • Pb-free lead plating; RoHS compliant • Qualified according to JEDE

Infineon Technologies AG
Infineon Technologies AG
pdf
7623 IDT05S60C
2nd Generation thinQ SiC Schottky Diode

IDT05S60C 2nd Generation thinQ!TM SiC Schottky Diode Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark • No reverse recovery / No forward recovery • No temperature influence on the switching behavior • High surge current capability • Pb-free lead plating; RoHs compliant • Qualified according to JE

Infineon Technologies AG
Infineon Technologies AG
pdf
7622 IDT06S60C
2nd Generation thinQ SiC Schottky Diode

IDT06S60C 2nd generation thinQ!TM SiC Schottky Diode Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark • No reverse recovery/ No forward recovery • No temperature influence on the switching behavior • High surge current capability • Pb-free lead plating; RoHS compliant • Qualified according to JED

Infineon Technologies AG
Infineon Technologies AG
pdf
7621 IDT08S60C
2nd Generation thinQ SiC Schottky Diode

IDT08S60C 2nd Generation thinQ!TM SiC Schottky Diode Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark • No reverse recovery/ No forward recovery • No temperature influence on the switching behavior • High surge current capability • Pb-free lead plating; RoHS compliant • Qualified according to JED

Infineon Technologies AG
Infineon Technologies AG
pdf

[1]     [2]     [3]     [4]     [5]     [6]     [7]     >>>.....[1271] 

List of most widely used semiconductors

Part Number Function Manufacturers PDF
1N4007

The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V.

Vishay Semiconductor
Vishay
pdf
LM317

This is a popular adjustable voltage regulator.
( 1.2V to 37V)

On Semiconductor
ON Semiconductor
pdf

 6N137  |   LM393   |   2N3906    |   2N2222   |   TIP120   |

   1N5818   |   LM324N    |   A1015   |   SMAJ20CA  


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