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ICE20N170 PDF Datasheet Search Results

No Part number Description ( Function ) Manufacturers PDF
8 ICE20N170
N-Channel Enhancement Mode MOSFET

Preliminary Data Sheet ICE20N170 ICE20N170 N-Channel Enhancement Mode MOSFET Features • Low rDS(on) • Ultra Low Gate Charge • High dv/dt capability • High Unclamped Inductive Switching (UIS) capability • High peak current capability • Increased transconductance performance • Optimized design for high performance power systems HALOGEN Product Summary ID V(BR)DSS

Icemos
Icemos
pdf
7 ICE20N170
N-Channel Enhancement Mode MOSFET

ICE20N170 N-Channel Enhancement Mode MOSFET Features: r Low DS(on) Ultra Low Gate Charge High dv/dt Capability High Unclamped Inductive Switching (UIS) Capability High Peak Current Capability Increased Transconductance Performance Optimized Design For High Performance Power Systems Product Summary ID V(BR)DSS rDS(ON) Qg TA = 25°C ID = 250uA VGS = 10V VDS = 480V

Micross Components
Micross Components
pdf
6 ICE20N170B
N-Channel Enhancement Mode MOSFET

Preliminary Data Sheet ICE20N170B ICE20N170B N-Channel Enhancement Mode MOSFET Features • Low rDS(on) • Ultra Low Gate Charge • High dv/dt capability • High Unclamped Inductive Switching (UIS) capability • High peak current capability • Increased transconductance performance • Optimized design for high performance power systems Product Summary ID V(BR)DSS rDS(on)

Icemos
Icemos
pdf
5 ICE20N170B
N-Channel Enhancement Mode MOSFET

ICE20N170B N-Channel Enhancement Mode MOSFET Features: r Low DS(on) Ultra Low Gate Charge High dv/dt Capability High Unclamped Inductive Switching (UIS) Capability High Peak Current Capability Increased Transconductance Performance Optimized Design For High Performance Power Systems Product Summary ID V(BR)DSS rDS(ON) Qg TA = 25°C ID = 250uA VGS = 10V VDS = 480V

Micross Components
Micross Components
pdf
4 ICE20N170FP
N-Channel Enhancement Mode MOSFET

Preliminary Data Sheet ICE20N170FP ICE20N170FP N-Channel Enhancement Mode MOSFET Features • Low rDS(on) • Ultra Low Gate Charge • High dv/dt capability • High Unclamped Inductive Switching (UIS) capability • High peak current capability • Increased transconductance performance • Optimized design for high performance power systems HALOGEN Product Summary ID V(BR)

Icemos
Icemos
pdf
3 ICE20N170FP
N-Channel Enhancement Mode MOSFET

ICE20N170FP N-Channel Enhancement Mode MOSFET Features: r Low DS(on) Ultra Low Gate Charge High dv/dt Capability High Unclamped Inductive Switching (UIS) Capability High Peak Current Capability Increased Transconductance Performance Optimized Design For High Performance Power Systems Product Summary ID V(BR)DSS rDS(ON) Qg TA = 25°C ID = 250uA VGS = 10V VDS = 480

Micross Components
Micross Components
pdf



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