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Datasheet ICE10S01 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 46 | ICE10N60 | N-Channel Enhancement Mode MOSFET ICE10N60
N-Channel Enhancement Mode MOSFET
Features:
r Low DS(on)
Ultra Low Gate Charge High dv/dt Capability High Unclamped Inductive Switching (UIS) Capability High Peak Current Capability Increased Transconductance Performance Optimized Design For High Performance Power Systems Maximu |
 Icemos |
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| 45 | ICE10N60FP | N-Channel Enhancement Mode MOSFET ICE10N60FP
N-Channel Enhancement Mode MOSFET
ID V(BR)DSS rDS(ON)
Qg
Product Summary
TA = 25°C ID = 250uA VGS = 10V VDS = 480V
10A 600V 0.28Ω 41nC
Max Min Typ Typ
Features:
r Low DS(on)
Ultra Low Gate Charge High dv/dt Capability High Unclamped Inductive Switching (UIS) Capability Hi |
 Micross Components |
|
| 44 | ICE10N65 | N-Channel Enhancement Mode MOSFET ICE10N65
ICE10N65 N-Channel
Enhancement Mode MOSFET
Features
• Low rDS(on) • Ultra Low Gate Charge • High dv/dt capability • High Unclamped Inductive Switching (UIS) capability • High peak current capability • Increased transconductance performance • Optimized design for high performa |
Icemos |
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| 43 | ICE10N65 | N-Channel Enhancement Mode MOSFET ICE10N65
N-Channel Enhancement Mode MOSFET
Features:
r Low DS(on)
Ultra Low Gate Charge High dv/dt Capability High Unclamped Inductive Switching (UIS) Capability High Peak Current Capability Increased Transconductance Performance Optimized Design For High Performance Power Systems Maximu |
Micross Components |
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