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Datasheet HY1606P Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
1 | HY1606P | N-Channel Enhancement Mode MOSFET HY1606P/B
N-Channel Enhancement Mode MOSFET
Features
• 60V/66A
RDS(ON) = 10.4 mΩ (typ.) @ VGS=10V
• 100% avalanche tested • Reliable and Rugged • Lead Free and Green Devices Available
(RoHS Compliant)
Pin Description
DS G TO-220FB-3L
DS G TO-263-2L
Applications
• Switching applicat |
HOOYI |
HY16 Datasheet ( Hoja de datos ) - resultados coincidentes |
Número de pieza | Descripción | Fabricantes | |
HY1606AP | N-Channel Enhancement Mode MOSFET |
HOOYI |
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HY1607P | N-Channel Enhancement Mode MOSFET |
HOOYI |
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HY1606P | N-Channel Enhancement Mode MOSFET |
HOOYI |
Esta página es del resultado de búsqueda del HY1606P. Si pulsa el resultado de búsqueda de HY1606P se puede ver detalladamente sobre la hoja de datos, el circuito y la disposición de pin. |
Número de pieza | Descripción | Fabricantes | |
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